发明授权
- 专利标题： Methods and apparatus for insitu analysis of gases in electronic device fabrication systems
- 专利标题（中）： 电子设备制造系统中气体的原位分析方法和装置
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申请号： US11830832申请日： 2007-07-30
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公开(公告)号： US07770431B2公开(公告)日： 2010-08-10
- 发明人: David K. Carlson , Satheesh Kuppurao
- 申请人： David K. Carlson , Satheesh Kuppurao
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Dugan & Dugan, PC
- 主分类号： G01N7/00
- IPC分类号： G01N7/00
摘要：
Systems and methods are disclosed that include adjusting a pressure level of a sample gas in a testing chamber, for example, using a pressurized inert reference gas, and determining a composition of the adjusted sample gas. By adjusting the pressure level of the sample gas, the composition of the sample gas may be determined more accurately than otherwise possible. Numerous other aspects are disclosed.
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