发明授权
- 专利标题: Hall-effect magnetic sensors with improved magnetic responsivity and methods for manufacturing the same
- 专利标题(中): 具有改进的磁响应性的霍尔效应磁传感器及其制造方法
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申请号: US12178144申请日: 2008-07-23
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公开(公告)号: US07772661B2公开(公告)日: 2010-08-10
- 发明人: Wayne Kilian
- 申请人: Wayne Kilian
- 申请人地址: US NJ Morristown
- 专利权人: Honeywell International Inc.
- 当前专利权人: Honeywell International Inc.
- 当前专利权人地址: US NJ Morristown
- 代理机构: Shumaker & Sieffert, P.A.
- 主分类号: H01L49/02
- IPC分类号: H01L49/02 ; H01L27/22 ; H01L43/04 ; H01L43/06
摘要:
A Hall-effect magnetic sensor comprises a p-type Hall element and an n-type epitaxial Hall element. The p-type element can be implanted directly on top of the n-type element. The merged Hall elements can be biased in parallel to provide a nearly zero-bias depletion layer throughout for isolation. Electrical contacts to the n-type element can be diffused down through the p-type element and positioned to partially obstruct current flow in the p-type element. Electrical contacts can be diffused into the p-type element. Each bias contact of the p-type element can be connected to respective bias contacts of the n-type element in a parallel fashion. Then, an output signal can be taken at the sense contacts of the n-type element in order to provide improved magnetic responsivity. Further provided is a method for manufacturing the Hall-effect magnetic sensor.