Invention Grant
- Patent Title: Substrate thickness measuring during polishing
- Patent Title (中): 抛光时的基板厚度测量
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Application No.: US12185719Application Date: 2008-08-04
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Publication No.: US07774086B2Publication Date: 2010-08-10
- Inventor: Jeffrey Drue David , Dominic J. Benvegnu , Harry Q. Lee , Boguslaw A. Swedek , Lakshmanan Karuppiah
- Applicant: Jeffrey Drue David , Dominic J. Benvegnu , Harry Q. Lee , Boguslaw A. Swedek , Lakshmanan Karuppiah
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Fish & Richardson P.C.
- Main IPC: G06F19/00
- IPC: G06F19/00 ; H01L21/00 ; B24B49/00

Abstract:
A computer program product that determines a polishing endpoint includes obtaining spectra from different zones on a substrate during different times in a polishing sequence, matches the spectra with indexes in a library and uses the indexes to determining a polishing rate for each of the different zones from the indexes. An adjusted polishing rate can be determined for one of the zones, which causes the substrate to have a desired profile when the polishing end time is reached.
Public/Granted literature
- US07657342B2 Substrate thickness measuring during polishing Public/Granted day:2010-02-02
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