发明授权
- 专利标题： Integrated circuit fabrication
- 专利标题（中）： 集成电路制造
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申请号： US12119831申请日： 2008-05-13
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公开(公告)号： US07776683B2公开(公告)日： 2010-08-17
- 发明人: Luan C. Tran , John Lee , Zengtao “Tony” Liu , Eric Freeman , Russell Nielsen
- 申请人： Luan C. Tran , John Lee , Zengtao “Tony” Liu , Eric Freeman , Russell Nielsen
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Knobbe, Martens, Olson & Bear, LLP
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242
摘要：
A method for defining patterns in an integrated circuit comprises defining a plurality of features in a first photoresist layer using photolithography over a first region of a substrate. The method further comprises using pitch multiplication to produce at least two features in a lower masking layer for each feature in the photoresist layer. The features in the lower masking layer include looped ends. The method further comprises covering with a second photoresist layer a second region of the substrate including the looped ends in the lower masking layer. The method further comprises etching a pattern of trenches in the substrate through the features in the lower masking layer without etching in the second region. The trenches have a trench width.
公开/授权文献
- US20080227293A1 INTEGRATED CIRCUIT FABRICATION 公开/授权日：2008-09-18
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