发明授权
- 专利标题: In-situ formation of oxidized aluminum nitride films
- 专利标题(中): 氧化氮化铝膜的原位形成
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申请号: US11745278申请日: 2007-05-07
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公开(公告)号: US07776763B2公开(公告)日: 2010-08-17
- 发明人: Kimberly G. Reid , Anthony Dip
- 申请人: Kimberly G. Reid , Anthony Dip
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Wood, Herron & Evans, LLP
- 主分类号: H01L21/31
- IPC分类号: H01L21/31 ; H01L21/469
摘要:
A method is provided for in-situ formation of a thin oxidized AlN film on a substrate. The method includes providing the substrate in a process chamber, depositing an AlN film on the substrate, and post-treating the AlN film with exposure to a nitrogen and oxygen-containing gas. The post-treating increases the dielectric constant of the AlN film with substantially no increase in the AlN film thickness. The method can also include pre-treating the substrate prior to AlN deposition, post-annealing the AlN film before or after the post-treatment, or both.
公开/授权文献
- US20070259534A1 IN-SITU FORMATION OF OXIDIZED ALUMINUM NITRIDE FILMS 公开/授权日:2007-11-08