发明授权
- 专利标题： Metal line of semiconductor device and method for forming the same
- 专利标题（中）： 半导体器件的金属线及其形成方法
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申请号： US12329718申请日： 2008-12-08
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公开(公告)号： US07777336B2公开(公告)日： 2010-08-17
- 发明人: Jeong Tae Kim , Seung Jin Yeom , Baek Mann Kim , Dong Ha Jung , Joon Seok Oh , Nam Yeal Lee , Jae Hong Kim
- 申请人： Jeong Tae Kim , Seung Jin Yeom , Baek Mann Kim , Dong Ha Jung , Joon Seok Oh , Nam Yeal Lee , Jae Hong Kim
- 申请人地址： KR Gyeonggi-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Ladas & Parry LLP
- 优先权： KR10-2008-0045586 20080516
- 主分类号： H01L21/48
- IPC分类号： H01L21/48
摘要：
A metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate and a metal line forming region is formed in the insulation layer. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer, and the diffusion layer has a multi-layered structure of an Ru layer, an RuxOy layer, an IrxOy layer, and a Ti layer. A metal layer is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.
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