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    Metal line having a multi-layered diffusion layer in a semiconductor device and method for forming the same
    5.
    发明授权
    Metal line having a multi-layered diffusion layer in a semiconductor device and method for forming the same 失效
    在半导体装置中具有多层扩散层的金属线及其形成方法

    公开(公告)号：US07875978B2

    公开(公告)日：2011-01-25

    申请号：US12485473

    申请日：2009-06-16

    申请人： Dong Ha Jung ,  Seung Jin Yeom ,  Baek Mann Kim ,  Joon Seok Oh ,  Nam Yeal Lee

    发明人： Dong Ha Jung ,  Seung Jin Yeom ,  Baek Mann Kim ,  Joon Seok Oh ,  Nam Yeal Lee

    IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L23/53238 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76858 ,  H01L21/76873 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A metal line having a multi-layered diffusion layer in a resultant semiconductor device is presented along with corresponding methods of forming the same. The metal line includes an insulation layer, a multi-layered diffusion barrier, and a metal layer. The insulation layer is formed on a semiconductor substrate and has a metal line forming region. The multi-layered diffusion barrier is formed on a surface of the metal line forming region defined in the insulation layer. The diffusion barrier includes a VB2 layer, a CrV layer and a Cr layer. The metal layer is formed on the diffusion barrier which substantially fills in the metal line forming region of the insulation layer to eventually form the metal line.

    摘要翻译： 在所得半导体器件中具有多层扩散层的金属线与其形成方法相对应。 金属线包括绝缘层，多层扩散阻挡层和金属层。 绝缘层形成在半导体衬底上并具有金属线形成区域。 多层扩散阻挡层形成在绝缘层中形成的金属线形成区域的表面上。 扩散阻挡层包括VB2层，CrV层和Cr层。 金属层形成在扩散阻挡层上，其基本上填充在绝缘层的金属线形成区域中，以最终形成金属线。

    Method for manufacturing semiconductor device preventing loss of junction region
    6.
    发明授权
    Method for manufacturing semiconductor device preventing loss of junction region 有权
    制造防止结区域损失的半导体器件的方法

    公开(公告)号：US07820546B2

    公开(公告)日：2010-10-26

    申请号：US12347420

    申请日：2008-12-31

    申请人： Dong Ha Jung ,  Seung Jin Yeom ,  Baek Mann Kim ,  Chang Soo Park ,  Jeong Tae Kim ,  Nam Yeal Lee

    发明人： Dong Ha Jung ,  Seung Jin Yeom ,  Baek Mann Kim ,  Chang Soo Park ,  Jeong Tae Kim ,  Nam Yeal Lee

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/28518

    摘要： A method for manufacturing a semiconductor device includes forming an insulation layer having a contact hole on a semiconductor substrate. A metal silicide layer is deposited on a surface of the contact hole and the insulation layer to have a concentration gradient that changes from a silicon-rich composition to a metal-rich composition, with the lower portion of the metal silicide layer having the silicon-rich composition and the upper portion of the metal silicide layer having the metal-rich composition. The metal silicide layer is then annealed so that the compositions of metal and silicon in the metal silicide layer become uniform.

    摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成具有接触孔的绝缘层。 金属硅化物层沉积在接触孔和绝缘层的表面上，具有从富含硅的组合物变为富含金属的组合物的浓度梯度，金属硅化物层的下部具有硅 - 富金属组合物和具有富金属组合物的金属硅化物层的上部。 然后对金属硅化物层进行退火，使得金属硅化物层中的金属和硅的组成变得均匀。

    PHASE CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
    9.
    发明申请
    PHASE CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
    相变存储器件及其制造方法

    公开(公告)号：US20090184307A1

    公开(公告)日：2009-07-23

    申请号：US12240013

    申请日：2008-09-29

    申请人： Sung Min YOON ,  Byoung Gon Yu ,  Seung Yun Lee ,  Young Sam Park ,  Kyu Jeong Choi ,  Nam Yeal Lee

    发明人： Sung Min YOON ,  Byoung Gon Yu ,  Seung Yun Lee ,  Young Sam Park ,  Kyu Jeong Choi ,  Nam Yeal Lee

    IPC分类号： H01L21/06 ,  H01L45/00

    CPC分类号： H01L45/1233 ,  H01L45/06 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1625

    摘要： A phase change memory device and a method of fabricating the same are provided. A phase change material layer of the phase change memory device is formed of germanium (Ge)-antimony (Sb)-Tellurium (Te)-based Ge2Sb2+xTe5 (0.12≦x≦0.32), so that the crystalline state is determined as a stable single phase, not a mixed phase of a metastable phase and a stable phase, in phase transition between crystalline and amorphous states of a phase change material, and the phase transition according to increasing temperature directly transitions to the single stable phase from the amorphous state. As a result, set operation stability and distribution characteristics of set state resistances of the phase change memory device can be significantly enhanced, and an amorphous resistance can be maintained for a long time at a high temperature, i.e., around crystallization temperature, and thus reset operation stability and rewrite operation stability of the phase change memory device can be significantly enhanced.

    摘要翻译： 提供了一种相变存储器件及其制造方法。 相变存储器件的相变材料层由锗（Ge） - 锑（Sb） - 碲（Te）基Ge2Sb2 + xTe5（0.12 <= x <= 0.32）形成，从而确定晶体状态 作为稳定的单相，不是相变材料的晶态和非晶态之间的相转变中的亚稳相和稳定相的混合相，并且根据升温的相变随着温度的升高直接转变为单稳态 非晶态。 结果，可以显着提高相变存储器件的设定状态电阻的设定操作稳定性和分布特性，并且可以在高温下（即，结晶温度附近）长时间保持非晶形电阻，并因此复位 可以显着提高相变存储器件的操作稳定性和重写操作的稳定性。