发明授权
- 专利标题: Triangle two dimensional complementary patterning of pillars
- 专利标题(中): 支柱三角形二维互补图案化
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申请号: US12216109申请日: 2008-06-30
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公开(公告)号: US07781269B2公开(公告)日: 2010-08-24
- 发明人: Chun-Ming Wang , Yung-Tin Chen , Roy E. Scheuerlein
- 申请人: Chun-Ming Wang , Yung-Tin Chen , Roy E. Scheuerlein
- 申请人地址: US CA Milpitas
- 专利权人: Sandisk 3D LLC
- 当前专利权人: Sandisk 3D LLC
- 当前专利权人地址: US CA Milpitas
- 代理机构: The Marbury Law Group, PLLC
- 主分类号: H01L21/82
- IPC分类号: H01L21/82
摘要:
A method of making a semiconductor device includes forming at least one device layer over a substrate, forming a plurality of spaced apart first features over the device layer, where each three adjacent first features form an equilateral triangle, forming sidewall spacers on the first features, filling a space between the sidewall spacers with a plurality of filler features, selectively removing the sidewall spacers, and etching the at least one device layer using at least the plurality of filler features as a mask. A device contains a plurality of bottom electrodes located over a substrate, a plurality of spaced apart pillars over the plurality of bottom electrodes, and a plurality of upper electrodes contacting the plurality of pillars. Each three adjacent pillars form an equilateral triangle, and each pillar comprises a semiconductor device. The plurality of pillars include a plurality of first pillars having a first shape and a plurality of second pillars having a second shape different from the first shape.