Invention Grant
US07781296B2 Integrated circuit comprising a capacitor with metal electrodes and process for fabricating such a capacitor
有权
集成电路包括具有金属电极的电容器和用于制造这种电容器的工艺
- Patent Title: Integrated circuit comprising a capacitor with metal electrodes and process for fabricating such a capacitor
- Patent Title (中): 集成电路包括具有金属电极的电容器和用于制造这种电容器的工艺
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Application No.: US11570731Application Date: 2005-06-07
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Publication No.: US07781296B2Publication Date: 2010-08-24
- Inventor: Aomar Halimaoui , Rebha El Farhane , Benoit Froment
- Applicant: Aomar Halimaoui , Rebha El Farhane , Benoit Froment
- Applicant Address: FR Crolles NL BA Eindhoven
- Assignee: STMicroelectronics SAS,Koninklijke Philips Electronics N.V.
- Current Assignee: STMicroelectronics SAS,Koninklijke Philips Electronics N.V.
- Current Assignee Address: FR Crolles NL BA Eindhoven
- Agency: Fleit Gibbons Gutman Bongini & Bianco P.L.
- Agent Lisa K. Jorgenson; Jose Gutman
- Priority: FR0406674 20040618
- International Application: PCT/FR2005/001400 WO 20050607
- International Announcement: WO2006/008356 WO 20060126
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
An integrated circuit (IC) includes at least one capacitor with metal electrodes. At least one of the electrodes (10 or 30) is formed from at least surface-silicided hemispherical grain silicon or silicon alloy. A fabrication process for obtaining such a capacitor with silicided metal electrodes is also provided.
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