发明授权
- 专利标题： Recessed channel transistor and method for preparing the same
- 专利标题（中）： 嵌入式沟道晶体管及其制备方法
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申请号： US12174110申请日： 2008-07-16
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公开(公告)号： US07781830B2公开(公告)日： 2010-08-24
- 发明人: Hsiao Che Wu , Ming Yen Li , Wen Li Tsai , Bin Siang Tsai
- 申请人： Hsiao Che Wu , Ming Yen Li , Wen Li Tsai , Bin Siang Tsai
- 申请人地址： TW Hsinchu
- 专利权人： Promos Technologies Inc.
- 当前专利权人： Promos Technologies Inc.
- 当前专利权人地址： TW Hsinchu
- 代理机构： WPAT, P.C.
- 代理商 Anthony King
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A recessed channel transistor comprises a semiconductor substrate having a trench isolation structure, a gate structure having a lower block in the semiconductor substrate and an upper block on the semiconductor substrate, two doped regions positioned at two sides of the upper block and above the lower block, and an insulation spacer positioned at a sidewall of the upper block and having a bottom end sandwiched between the upper block and the doped regions. In particular, the two doped regions serves as the source and drain regions, respectively, and the lower block of the gate structure serves as the recessed gate of the recessed channel transistor.
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