发明授权
- 专利标题: Method of manufacturing carbon nanostructure
- 专利标题(中): 制造碳纳米结构的方法
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申请号: US11587212申请日: 2005-01-28
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公开(公告)号: US07785558B2公开(公告)日: 2010-08-31
- 发明人: Takeshi Hikata
- 申请人: Takeshi Hikata
- 申请人地址: JP Osaka
- 专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人地址: JP Osaka
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2004-128231 20040423; JP2004-220432 20040728
- 国际申请: PCT/JP2005/001259 WO 20050128
- 国际公布: WO2005/102923 WO 20051103
- 主分类号: D01F9/12
- IPC分类号: D01F9/12 ; D01F9/127 ; C09C1/56 ; C23C16/00
摘要:
The present invention relates to a method of manufacturing a carbon nanostructure for growing crystalline carbon by vapor deposition from a crystal growth surface of a catalytic base including a catalytic material, and in particular, to a method of manufacturing a carbon nanostructure where at least two gases including a feedstock gas are brought into contact with the catalytic base simultaneously. Preferably, the at least two gases are constituted by at least one feedstock gas and at least one carrier gas. Preferably, the carrier gas is brought into contact with the crystal growth surface, and the feedstock gas is brought into contact with at least a part of a region except for the crystal growth surface with which the carrier gas has been brought into contact. Preferably, the material gas contains an ion, and further preferably, it contains a carbon ion.
公开/授权文献
- US20070224107A1 Method of Manufacturing Carbon Nanostructure 公开/授权日:2007-09-27
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