发明授权
- 专利标题： Technique for compensating for a difference in deposition behavior in an interlayer dielectric material
- 专利标题（中）： 补偿层间电介质材料沉积行为差异的技术
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申请号： US12168443申请日： 2008-07-07
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公开(公告)号： US07785956B2公开(公告)日： 2010-08-31
- 发明人: Ralf Richter , Robert Seidel , Carsten Peters
- 申请人： Ralf Richter , Robert Seidel , Carsten Peters
- 申请人地址： US TX Austin
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Williams, Morgan & Amerson, P.C.
- 优先权： DE102007046847 20070929
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
By selectively providing a buffer layer having an appropriate thickness, height differences occurring during the deposition of an SACVD silicon dioxide may be reduced during the formation of an interlayer dielectric stack of advanced semiconductor devices. The buffer material may be selectively provided after the deposition of contact etch stop layers of both types of internal stress or may be provided after the deposition of one type of dielectric material and may be used during the subsequent patterning of the other type of dielectric stop material as an efficient etch stop layer.
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