Invention Grant
- Patent Title: Growth substrates for inverted metamorphic multijunction solar cells
- Patent Title (中): 倒置变质多结太阳能电池的生长衬底
-
Application No.: US12337014Application Date: 2008-12-17
-
Publication No.: US07785989B2Publication Date: 2010-08-31
- Inventor: Paul R. Sharps , Arthur Cornfeld , Tansen Varghese , Fred Newman , Jacqueline Diaz
- Applicant: Paul R. Sharps , Arthur Cornfeld , Tansen Varghese , Fred Newman , Jacqueline Diaz
- Applicant Address: US NM Albuquerque
- Assignee: Emcore Solar Power, Inc.
- Current Assignee: Emcore Solar Power, Inc.
- Current Assignee Address: US NM Albuquerque
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46
Abstract:
A method of manufacturing a solar cell by providing a gallium arsenide carrier with a prepared bonding surface; providing a sapphire substrate; bonding the gallium arsenide carrier and the sapphire substrate to produce a composite structure; detaching the bulk of the gallium arsenide carrier from the composite structure, leaving a gallium arsenide growth substrate on the sapphire substrate; and depositing a sequence of layers of semiconductor material forming a solar cell on the growth substrate. For some solar cells, the method further includes mounting a surrogate second substrate on top of the sequence of layers of semiconductor material forming a solar cell; and removing the growth substrate.
Public/Granted literature
- US20100151618A1 Growth Substrates for Inverted Metamorphic Multijunction Solar Cells Public/Granted day:2010-06-17
Information query
IPC分类:
