发明授权
US07787221B2 Tunneling magnetic sensing element including non-magnetic metal layer between magnetic layers 有权
隧道磁感应元件包括磁性层之间的非磁性金属层

Tunneling magnetic sensing element including non-magnetic metal layer between magnetic layers
摘要:
A first pinned magnetic sublayer 4a has a multilayered structure including a first insertion subsublayer disposed between a lower ferromagnetic subsublayer and an upper ferromagnetic subsublayer. The first insertion subsublayer has an average thickness exceeding 3 Å and 6 Å or less. This results in an interlayer coupling magnetic field Hin lower than a known art while RA and the rate of resistance change (ΔR/R) substantially identical to those of the known structure are maintained.
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