发明授权
- 专利标题: R-Fe-B based thin film magnet and method for preparation thereof
- 专利标题(中): R-Fe-B系薄膜磁铁及其制备方法
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申请号: US10593624申请日: 2005-03-23
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公开(公告)号: US07790300B2公开(公告)日: 2010-09-07
- 发明人: Shunji Suzuki , Kenichi Machida , Eiji Sakaguchi , Kazuya Nakamura
- 申请人: Shunji Suzuki , Kenichi Machida , Eiji Sakaguchi , Kazuya Nakamura
- 申请人地址: JP Saitama JP Tokyo JP Tokyo
- 专利权人: Japan Science and Technology Agency,Hitachi Metals, Ltd.,Namiki Precision Jewel Co., Ltd.
- 当前专利权人: Japan Science and Technology Agency,Hitachi Metals, Ltd.,Namiki Precision Jewel Co., Ltd.
- 当前专利权人地址: JP Saitama JP Tokyo JP Tokyo
- 代理机构: Westerman, Hattori, Daniels & Adrian, LLP
- 优先权: JP2004-085806 20040323
- 国际申请: PCT/JP2005/005183 WO 20050323
- 国际公布: WO2005/091315 WO 20050929
- 主分类号: B32B15/00
- IPC分类号: B32B15/00
摘要:
An R—Fe—B based thin film magnet including an R—Fe—B based alloy which contains 28 to 45 percent by mass of R element (where R represents at least one type of rare-earth lanthanide elements) and which is physically formed into a film, wherein the R—Fe—B based alloy has a composite texture composed of R2Fe14B crystals having a crystal grain diameter of 0.5 to 30 μm and R-element-rich grain boundary phases present at boundaries between the crystals. The magnetization characteristics of the thin film magnet are improved. The R—Fe—B based thin film magnet can be prepared by heating to 700° C. to 1,200° C. during physical film formation or/and the following heat treatment, so as to grow crystal grains and form R-element-rich grain boundary phases.
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