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公开(公告)号：US20070199623A1
公开(公告)日：2007-08-30
申请号：US10593624
申请日：2005-03-23
CPC分类号： H01F41/22 , H01F1/057 , H01F10/126 , H01F41/0253 , H01F41/0293 , Y10T428/32 , Y10T428/325
摘要： An R—Fe—B based thin film magnet including an R—Fe—B based alloy which contains 28 to 45 percent by mass of R element (where R represents at least one type of rare-earth lanthanide elements) and which is physically formed into a film, wherein the R—Fe—B based alloy has a composite texture composed of R2Fe14B crystals having a crystal grain diameter of 0.5 to 30 μm and R-element-rich grain boundary phases present at boundaries between the crystals. The magnetization characteristics of the thin film magnet are improved. The R—Fe—B based thin film magnet can be prepared by heating to 700° C. to 1,200° C. during physical film formation or/and the following heat treatment, so as to grow crystal grains and form R-element-rich grain boundary phases.
摘要翻译： 包含R-Fe-B系合金的R-Fe-B类薄膜磁体，其含有28〜45质量％的R元素（其中R表示至少一种稀土镧系元素），并且其物理形成 其中R-Fe-B基合金具有由晶体直径为0.5至30μm的R 2 Fe 14 N 12 B晶体组成的复合纹理，以及 存在于晶体之间的边界处的富含R元素的晶界相。 提高了薄膜磁铁的磁化特性。 R-Fe-B类薄膜磁体可以在物理成膜或/和随后的热处理中加热至700℃至1200℃，从而生长晶粒并形成富含R元素的薄膜 晶界相。
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公开(公告)号：US07790300B2
公开(公告)日：2010-09-07
申请号：US10593624
申请日：2005-03-23
IPC分类号： B32B15/00
CPC分类号： H01F41/22 , H01F1/057 , H01F10/126 , H01F41/0253 , H01F41/0293 , Y10T428/32 , Y10T428/325
摘要： An R—Fe—B based thin film magnet including an R—Fe—B based alloy which contains 28 to 45 percent by mass of R element (where R represents at least one type of rare-earth lanthanide elements) and which is physically formed into a film, wherein the R—Fe—B based alloy has a composite texture composed of R2Fe14B crystals having a crystal grain diameter of 0.5 to 30 μm and R-element-rich grain boundary phases present at boundaries between the crystals. The magnetization characteristics of the thin film magnet are improved. The R—Fe—B based thin film magnet can be prepared by heating to 700° C. to 1,200° C. during physical film formation or/and the following heat treatment, so as to grow crystal grains and form R-element-rich grain boundary phases.
摘要翻译： 包含R-Fe-B系合金的R-Fe-B类薄膜磁体，其含有28〜45质量％的R元素（其中R表示至少一种稀土镧系元素），并且其物理形成 其中R-Fe-B基合金具有由晶体直径为0.5至30μm的R 2 Fe 14 B晶体和存在于晶体之间的边界处的富R晶体相的复合结构。 提高了薄膜磁铁的磁化特性。 R-Fe-B类薄膜磁体可以在物理成膜或/和随后的热处理中加热至700℃至1200℃，从而生长晶粒并形成富含R元素的薄膜 晶界相。
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3.发明授权Minute high-performance rare earth magnet for micromini product and process for producing the same 失效微型高性能稀土磁体用于微型产品及其制造方法公开(公告)号：US07402226B2
公开(公告)日：2008-07-22
申请号：US10551432
申请日：2004-03-04
IPC分类号： C23C14/34
CPC分类号： H01F1/0577 , C23C14/3464 , C23C14/3471 , H01F1/057 , H01F41/0253 , H01F41/0293
摘要： A method of manufacturing a rare earth permanent magnet comprises the steps of: forming a rare earth magnet by applying mechanical processing to a magnet block material, thereby damaging the surface of the magnet and causing a magnetic characteristic (BH)max of the magnet to deteriorate, followed by transforming a rare earth metal or an alloy thereof into fine particles or a vapor, and allowing the fine particles or vapor to diffuse and permeate the magnet, thereby improving the quality of the damaged magnet surface portion so that the magnetic characteristic (BH)max is recovered.
摘要翻译： 一种制造稀土永磁体的方法包括以下步骤：通过对磁体块材料进行机械加工来形成稀土磁体，从而损坏磁体的表面并使磁体的磁特性（BH）最大值劣化 然后将稀土金属或其合金转变为细颗粒或蒸汽，并使微粒或蒸汽扩散并渗透到磁体中，从而提高损坏的磁体表面部分的质量，使得磁特性（BH ）max被恢复。
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4.发明申请Minute high-performance rare earth magnet for micromini product and process for producing the same 失效微型高性能稀土磁体用于微型产品及其制造方法公开(公告)号：US20060278517A1
公开(公告)日：2006-12-14
申请号：US10551432
申请日：2004-03-04
CPC分类号： H01F1/0577 , C23C14/3464 , C23C14/3471 , H01F1/057 , H01F41/0253 , H01F41/0293
摘要： A method of manufacturing a rare earth permanent magnet comprises the steps of: forming a rare earth magnet by applying mechanical processing to a magnet block material, thereby damaging the surface of the magnet and causing a magnetic characteristic (BH)max of the magnet to deteriorate, followed by transforming a rare earth metal or an alloy thereof into fine particles or a vapor, and allowing the fine particles or vapor to diffuse and permeate the magnet, thereby improving the quality of the damaged magnet surface portion so that the magnetic characteristic (BH)max is recovered.
摘要翻译： 一种制造稀土永磁体的方法包括以下步骤：通过对磁体块材料进行机械加工来形成稀土磁体，从而损坏磁体的表面并产生磁特性（BH） SUB>劣化，然后将稀土金属或其合金转变成细颗粒或蒸汽，并使微粒或蒸汽扩散并渗透到磁体中，从而提高损坏的磁体表面部分的质量 使得磁特性（BH）最大值被恢复。
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5.发明申请Nd-Fe-B Magnetic with Modified Grain Boundary and Process for Producing the Same 有权具有改性晶粒边界的Nd-Fe-B磁性及其制备方法公开(公告)号：US20080006345A1
公开(公告)日：2008-01-10
申请号：US11793272
申请日：2005-12-14
申请人： Kenichi Machida , Shunji Suzuki
发明人： Kenichi Machida , Shunji Suzuki
IPC分类号： H01F1/01
CPC分类号： H01F1/0577 , C22C29/14 , H01F41/0293
摘要： [Problem] In known methods, an improvement of the coercive force is realized by allowing the Dy metal or the like to present selectively in crystal grain boundary portions of a sintered magnet. However, since these are based on a physical film formation method, e.g., sputtering, through the use of a vacuum vessel, there is a mass productivity problem in the case where large amounts of magnet is treated. Furthermore, there is a magnet cost problem from the viewpoint that, for example, an expensive, high-purity Dy metal or the like must be used as a raw material for film formation. [Solving Means] A method for modifying grain boundaries of a Nd—Fe—B base magnet characterized by including the step of allowing an M metal component to diffuse and penetrate from a surface of a Nd—Fe—B base sintered magnet body having a Nd-rich crystal grain boundary phase surrounding principal Nd2Fe14B crystals to the grain boundary phase through a reduction treatment of a fluoride, an oxide, or a chloride of an M metal element (where M is Pr, Dy, Tb, or Ho).
摘要翻译： [问题]在已知的方法中，通过使Dy金属等选择性地存在于烧结磁体的晶界部中，可以实现矫顽力的提高。 然而，由于这些基于物理成膜方法，例如溅射，通过使用真空容器，在处理大量磁体的情况下存在批量生产率问题。 此外，从例如必须使用昂贵，高纯度的Dy金属等作为成膜原料的观点出现磁铁成本问题。 [解决方案]一种用于改变Nd-Fe-B基础磁体的晶界的方法，其特征在于包括以下步骤：允许M金属组分从具有 通过氟化物，氧化物或氯化物的还原处理将包围主要Nd 2 Fe 14 B的富Nd晶界相结晶到晶界相 M金属元素（其中M为Pr，Dy，Tb或Ho）。
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6.发明授权Nd-Fe-B magnet with modified grain boundary and process for producing the same 有权具有改性晶界的Nd-Fe-B磁体及其制造方法公开(公告)号：US07824506B2
公开(公告)日：2010-11-02
申请号：US11793272
申请日：2005-12-14
申请人： Kenichi Machida , Shunji Suzuki
发明人： Kenichi Machida , Shunji Suzuki
IPC分类号： H01F1/057
CPC分类号： H01F1/0577 , C22C29/14 , H01F41/0293
摘要： In known methods, an improvement of the coercive force is realized by allowing the Dy metal or the like to present selectively in crystal grain boundary portions of a sintered magnet. However, since these are based on a physical film formation method, e.g., sputtering, through the use of a vacuum vessel, there is a mass productivity problem when a large number of magnets are treated. Furthermore, there is a magnet cost problem from the viewpoint that, for example, an expensive, high-purity Dy metal or the like must be used as a raw material for film formation. The method for modifying grain boundaries of a Nd—Fe—B base magnet includes the step of allowing an M metal component to diffuse and penetrate from a surface of a Nd—Fe—B base sintered magnet body having a Nd-rich crystal grain boundary phase surrounding principal Nd2Fe14B crystals to the grain boundary phase through a reduction treatment of a fluoride, an oxide, or a chloride of an M metal element (where M is Pr, Dy, Tb, or Ho).
摘要翻译： 在已知的方法中，通过使Dy金属等选择性地存在于烧结磁体的晶界部分中，可以实现矫顽力的提高。 然而，由于这些是基于物理成膜方法，例如溅射，通过使用真空容器，当大量的磁体被处理时，存在批量生产率问题。 此外，从例如必须使用昂贵，高纯度的Dy金属等作为成膜原料的观点出现磁铁成本问题。 Nd-Fe-B基磁体的晶界的修饰方法包括使M金属成分从具有富Nd晶界的Nd-Fe-B基烧结磁体的表面扩散并贯穿的步骤 通过还原处理M金属元素（其中M是Pr，Dy，Tb或Ho）的氟化物，氧化物或氯化物，使主要的Nd 2 Fe 14 B晶体相向晶界相。
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7.发明申请公开(公告)号：US20070034299A1
公开(公告)日：2007-02-15
申请号：US10560831
申请日：2004-06-14
申请人： Kenichi Machida , Shunji Suzuki
发明人： Kenichi Machida , Shunji Suzuki
IPC分类号： H01F1/057
CPC分类号： H01F1/0575 , H01F41/0293
摘要： [Object] To provide a high-performance rare earth-based magnet exhibiting a high coercive force or a high residual magnetic flux density even when the content of a rare earth element such as Dy or the like which is scarce is reduced. [Construction] A rare earth-iron-boron based magnet includes a crystal grain boundary layer enriched in element M (M is at least one rare earth element selected from Pr, Dy, Tb, and Ho) by diffusion of the element M from the surface of the magnet, wherein the relation between the coercive force Hcj and the content of the element M in the whole of the magnet is represented by the following expression: Hcj≧1+0.2×M (wherein 0.05≦M≦10) wherein Hcj is the coercive force (unit: MA/m), and M is the content of the element M in the whole of the magnet (% by mass). Furthermore, the magnet satisfies the following expression: Br≧1.68−0.17×Hcj wherein Br is the residual magnetic flux density (unit: T).
摘要翻译： 即使稀少的Dy等稀土类元素的含量降低，也能够提供具有高的矫顽力或高残留磁通密度的高性能的稀土类磁体。 [结构]稀土 - 铁 - 硼基磁体通过元素M的扩散而包含富含元素M的晶界边界层（M是选自Pr，Dy，Tb和Ho中的至少一种稀土元素） 磁体的表面，其中整个磁体中的矫顽力H C1j与元素M的含量之间的关系由下列表达式表示：H＆ > = 1 + 0.2xM（其中0.05 <= M <= 10）其中H c是矫顽力（单位：MA / m），M是元素M在整体上的含量 的磁体（质量％）。 此外，磁体满足以下表达式：Br> = 1.68-0.17×H cj其中Br是剩余磁通密度（单位：T）。
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公开(公告)号：US20050088011A1
公开(公告)日：2005-04-28
申请号：US10962655
申请日：2004-10-13
申请人： Shunji Suzuki , Yuta Urushiyama
发明人： Shunji Suzuki , Yuta Urushiyama
摘要： An apparatus for controlling stiffness of a vehicle body includes a slide member, a base member, a deformable member and an actuator. The slide member is disposed parallel to a direction of impact force acting on a first end of the slide member. The base member, which is disposed at a second end of the slide member, has a slit into which the slide member moves. The deformable member is disposed at the first end of the slide member. Both ends of the deformable member are connected to the base member and a cross section of the deformable member is substantially U-shaped. The actuator executes one of permitting the slide member to move into the slit and inhibiting the slide member from moving into the slit at a collision.
摘要翻译： 用于控制车身刚度的装置包括滑动构件，基座构件，可变形构件和致动器。 滑动构件平行于作用在滑动构件的第一端部的冲击力的方向设置。 设置在滑动构件的第二端的基部构件具有滑动构件移动到其中的狭缝。 可变形构件设置在滑动构件的第一端。 可变形构件的两端连接到基座构件，并且可变形构件的横截面基本上为U形。 执行器执行允许滑动构件移动到狭缝中并且在碰撞时阻止滑动构件移动到狭缝中的一个。
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9.发明授权Liquid crystal cell, display device, and method of fabricating liquid crystal cell with special fill ports 有权液晶单元，显示装置以及具有特殊填充口的液晶单元的制造方法公开(公告)号：US06678029B2
公开(公告)日：2004-01-13
申请号：US09907087
申请日：2001-07-17
申请人： Shunji Suzuki
发明人： Shunji Suzuki
IPC分类号： G02F11339
CPC分类号： G02F1/1339 , G02F1/1341
摘要： Bubbles mixed in liquid crystal injected into a liquid crystal cell are pushed out through an outlet. The outlet has a space secured to a maximum limit by an extended sealing portion reaching the outer peripheral end surfaces of substrates, and a step with a color filter is formed. The pushed-out bubbles are surely trapped by the space of the outlet. In a replenishing port for replenishing liquid crystal, an introduction spacer having a height equal to that of the color filter is provided, and by a capillary phenomenon, liquid crystal for replenishment can be smoothly introduced into the liquid crystal cell.
摘要翻译： 将注入液晶单元的液晶混合的气泡通过出口被推出。 出口具有通过延伸的密封部分到达基板的外周端面而被固定到最大极限的空间，并且形成具有滤色器的台阶。 被推出的泡沫肯定地被出口的空间所困住。 在用于补充液晶的补充口中，提供了具有与滤色器相同的高度的引入间隔物，并且通过毛细管现象，可以平稳地将液体加入到液晶单元中。
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公开(公告)号：US06665034B2
公开(公告)日：2003-12-16
申请号：US10037371
申请日：2002-01-03
申请人： Shunji Suzuki
发明人： Shunji Suzuki
IPC分类号： G02F11337
CPC分类号： G02F1/13336 , G02F1/133753
摘要： A rubbing direction (X) for each upper substrate of a tile panel constituting a liquid crystal panel unit is set along a horizontal direction (H) of the liquid crystal panel unit, a rubbing direction (Y) for each lower substrate of the tile panel is set along a vertical direction (V) thereof, and absorption axes (S) of polarizing plates and are allowed to coincide with the horizontal direction (H) of the liquid crystal panel unit. Moreover, in a set of four tile panels, the rubbing directions (X) and (Y) are made to differ from one another, thus viewing directions (Z) of high contrast are distributed into four directions, and turning directions (reference codes (R) and (L)) of liquid crystal molecules in the respective tile panels are arranged alternately in the horizontal direction (H) of the liquid crystal panel unit.
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