发明授权
- 专利标题: Method of fabricating a multi-bit electro-mechanical memory device
- 专利标题(中): 制造多位机电存储器件的方法
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申请号: US12007819申请日: 2008-01-16
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公开(公告)号: US07790494B2公开(公告)日: 2010-09-07
- 发明人: Min-Sang Kim , Sung-Young Lee , Sung-Min Kim , Eun-Jung Yun , Dong-Won Kim , Dong-Gun Park
- 申请人: Min-Sang Kim , Sung-Young Lee , Sung-Min Kim , Eun-Jung Yun , Dong-Won Kim , Dong-Gun Park
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2007-0004672 20070116
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L35/24 ; H01L51/00 ; H01L29/792
摘要:
A memory device may include a substrate, a bit line, at least a first lower word line, at least a first trap site, a pad electrode, at least a first cantilever electrode, and/or at least a first upper word line. The bit line may be formed on the substrate in a first direction. The first lower word line and the first trap site may be insulated from the bit line and formed in a second direction crossing the bit line. The pad electrode may be insulated at sidewalls of the first lower word line and the first trap site and connected to the bit line. The first cantilever electrode may be formed in the first direction, connected to the pad electrode, floated on the first trap site with at least a first lower vacant space, and/or configured to be bent in a third direction. The first upper word line may be formed on the first cantilever electrode in the second direction with at least a first upper vacant space.
公开/授权文献
- US20080185668A1 Memory device and method of fabricating the same 公开/授权日:2008-08-07