发明授权
- 专利标题： Integration of strained Ge into advanced CMOS technology
- 专利标题（中）： 将应变锗融入先进的CMOS技术
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申请号： US12118689申请日： 2008-05-10
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公开(公告)号： US07790538B2公开(公告)日： 2010-09-07
- 发明人: Huiling Shang , Meikei Ieong , Jack Oon Chu , Kathryn W. Guarini
- 申请人： Huiling Shang , Meikei Ieong , Jack Oon Chu , Kathryn W. Guarini
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 George Sai-Halasz; Louis J. Percello
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A structure and method of fabrication for PFET devices in a compressively strained Ge layer is disclosed. The fabrication method of such devices is compatible with standard CMOS technology and it is fully scalable. The processing includes selective epitaxial depositions of an over 50% Ge content buffer layer, a pure Ge layer, and a SiGe top layer. Fabricated buried channel PMOS devices hosted in the compressively strained Ge layer show superior device characteristics relative to similar Si devices.
公开/授权文献
- US20080248616A1 Integration of strained Ge into advanced CMOS technology 公开/授权日：2008-10-09
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