发明授权
- 专利标题： Metal-induced crystallization of amorphous silicon in thin film transistors
- 专利标题（中）： 薄膜晶体管中非晶硅的金属诱导结晶
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申请号： US11684447申请日： 2007-03-09
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公开(公告)号： US07790580B2公开(公告)日： 2010-09-07
- 发明人: Hoi Sing Kwok , Man Wong , Zhiguo Meng , Shuyun Zhao , Chunya Wu
- 申请人： Hoi Sing Kwok , Man Wong , Zhiguo Meng , Shuyun Zhao , Chunya Wu
- 申请人地址： HK Hong Kong
- 专利权人： Hong Kong University of Science and Technology
- 当前专利权人： Hong Kong University of Science and Technology
- 当前专利权人地址： HK Hong Kong
- 代理机构： Cooper & Dunham LLP
- 代理商 Robert D. Katz, Esq.
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/36
摘要：
The invention provides a method for forming thin film transistors including a polycrystalline semiconducting film. The method comprises depositing a first layer of amorphous semiconducting thin film on to a substrate; depositing a second layer of thin film on to the first layer of amorphous semiconducting thin film; patterning the second layer of thin film so that the first layer of amorphous semiconducting thin film is exposed at selected locations; exposing the first and second layers of thin film to a nickel containing compound in either a solution or a vapor phase; removing the second layer of thin film; and annealing the first layer of amorphous semiconducting thin film at an elevated temperature so the first layer of amorphous semiconducting thin film converts into a polycrystalline semiconducting thin film.