发明授权
US07791101B2 Indium gallium nitride-based ohmic contact layers for gallium nitride-based devices
有权
用于氮化镓基器件的基于氮化镓的基于欧姆接触层
- 专利标题： Indium gallium nitride-based ohmic contact layers for gallium nitride-based devices
- 专利标题（中）： 用于氮化镓基器件的基于氮化镓的基于欧姆接触层
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申请号： US12145213申请日： 2008-06-24
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公开(公告)号： US07791101B2公开(公告)日： 2010-09-07
- 发明人: Michael John Bergmann , Daniel Carleton Driscoll , David Todd Emerson
- 申请人： Michael John Bergmann , Daniel Carleton Driscoll , David Todd Emerson
- 申请人地址： US NC Durham
- 专利权人： Cree, Inc.
- 当前专利权人： Cree, Inc.
- 当前专利权人地址： US NC Durham
- 代理机构： Myers Bigel Sibley & Sajovec, P.A.
- 主分类号： H01L29/26
- IPC分类号： H01L29/26
摘要：
Light emitting devices include a gallium nitride-based epitaxial structure that includes an active light emitting region and a gallium nitride-based outer layer, for example gallium nitride. A indium nitride-based layer, such as indium gallium nitride, is provided directly on the outer layer. A reflective metal layer or a transparent conductive oxide layer is provided directly on the indium gallium nitride layer opposite the outer layer. The indium gallium nitride layer forms a direct ohmic contact with the outer layer. An ohmic metal layer need not be used. Related fabrication methods are also disclosed.
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