Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
    3.
    发明授权
    Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses 有权
    具有多个量子阱结构的具有不同孔厚度的III族氮化物基发光二极管结构

    公开(公告)号:US08575592B2

    公开(公告)日:2013-11-05

    申请号:US12699541

    申请日:2010-02-03

    IPC分类号: H01L33/00

    摘要: A Group III nitride based light emitting diode includes a p-type Group III nitride based semiconductor layer, an n-type Group III nitride based semiconductor layer that forms a P-N junction with the p-type Group III nitride based semiconductor layer, and a Group III nitride based active region on the n-type Group III nitride based semiconductor layer. The active region includes a plurality of sequentially stacked Group III nitride based wells including respective well layers. The plurality of well layers includes a first well layer having a first thickness and a second well layer having a second thickness. The second well layer is between the P-N junction and the first well layer, and the second thickness is greater than the first thickness.

    摘要翻译: III族氮化物类发光二极管包括p型III族氮化物基半导体层,与p型III族氮化物基半导体层形成PN结的n型III族氮化物基半导体层,以及一组 在n型III族氮化物基半导体层上的III族氮化物基有源区。 有源区包括多个依次层叠的III族氮化物基阱,包括相应的阱层。 多个阱层包括具有第一厚度的第一阱层和具有第二厚度的第二阱层。 第二阱层位于P-N结与第一阱层之间,第二厚度大于第一厚度。

    Light emitting devices having roughened/reflective contacts and methods of fabricating same
    5.
    发明授权
    Light emitting devices having roughened/reflective contacts and methods of fabricating same 有权
    具有粗糙/反射触点的发光器件及其制造方法

    公开(公告)号:US08471269B2

    公开(公告)日:2013-06-25

    申请号:US13313302

    申请日:2011-12-07

    IPC分类号: H01L27/15

    摘要: Light emitting devices include an active region of semiconductor material and a first contact on the active region. The first contact is configured such that photons emitted by the active region pass through the first contact. A photon absorbing wire bond pad is provided on the first contact. The wire bond pad has an area less than the area of the first contact. A reflective structure is disposed between the first contact and the wire bond pad such that the reflective structure has substantially the same area as the wire bond pad. A second contact is provided opposite the active region from the first contact. The reflective structure may be disposed only between the first contact and the wire bond pad. Methods of fabricating such devices are also provided.

    摘要翻译: 发光器件包括半导体材料的有源区和有源区上的第一接触。 第一触点配置成使得由有源区域发射的光子通过第一触点。 在第一触点上设置光子吸收引线键合焊盘。 接线焊盘的面积小于第一接触面积。 反射结构设置在第一触点和引线接合焊盘之间,使得反射结构具有与引线接合焊盘基本上相同的面积。 与第一触点相对的有源区域提供第二触点。 反射结构可以仅设置在第一触点和引线接合焊盘之间。 还提供了制造这种装置的方法。

    SOLID STATE LIGHT EMITTING DEVICES INCLUDING NONHOMOGENEOUS LUMINOPHORIC PARTICLE SIZE LAYERS
    6.
    发明申请
    SOLID STATE LIGHT EMITTING DEVICES INCLUDING NONHOMOGENEOUS LUMINOPHORIC PARTICLE SIZE LAYERS 有权
    固体发光装置,其中包括非均质的LUMINOPHORIC颗粒尺寸层

    公开(公告)号:US20120217865A1

    公开(公告)日:2012-08-30

    申请号:US13035520

    申请日:2011-02-25

    IPC分类号: H01J1/68 H01J1/62

    CPC分类号: H01J1/63 H01J1/68 H01L33/504

    摘要: A light emitting device includes an LED and a layer of luminophoric particles, such as phosphor, that are non-homogeneous in size as a function of distance away from the LED. For example, a first layer of relatively large size phosphor particles may be provided between a second layer of relatively small size phosphor particles and the LED. The large particles can provide high brightness and the small particles can reduce angular color temperature variation in emitted light.

    摘要翻译: 发光器件包括LED和诸如磷光体的发光体颗粒层,其尺寸不同于离开LED的距离的函数。 例如,可以在第二层相对较小尺寸的荧光体颗粒和LED之间提供第一层较大尺寸的荧光体颗粒。 大颗粒可以提供高亮度,并且小颗粒可以减少发射光中的角色温度变化。