发明授权
- 专利标题： Double-gate semiconductor devices having gates with different work functions and methods of manufacture thereof
- 专利标题（中）： 具有不同工作功能的门的双栅极半导体器件及其制造方法
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申请号： US12278629申请日： 2007-02-02
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公开(公告)号： US07791140B2公开(公告)日： 2010-09-07
- 发明人: Mark Van Dal , Radu Surdeanu
- 申请人： Mark Van Dal , Radu Surdeanu
- 申请人地址： NL Eindhoven
- 专利权人： NXP B.V.
- 当前专利权人： NXP B.V.
- 当前专利权人地址： NL Eindhoven
- 优先权： EP06101603 20060213
- 国际申请： PCT/IB2007/050357 WO 20070202
- 国际公布： WO2007/093930 WO 20070823
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/62 ; H01L21/20
摘要：
A double-gate FinFET and methods for its manufacture are provided. The FinFET includes first and second gates (72, 74) adjacent respective sides of the fin (20), with at least a portion of the first gate facing the fin being formed of polycrystalline silicon, and at least a portion of the second gate facing the fin being formed of a metal silicide compound. The different compositions of the two gates provide different respective work functions to reduce short channel effects.