发明授权
- 专利标题: Semiconductor device having multiple die redistribution layer
- 专利标题(中): 具有多个管芯再分配层的半导体器件
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申请号: US11617687申请日: 2006-12-28
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公开(公告)号: US07791191B2公开(公告)日: 2010-09-07
- 发明人: Hem Takiar , Shrikar Bhagath
- 申请人: Hem Takiar , Shrikar Bhagath
- 申请人地址: US CA Milpitas
- 专利权人: SanDisk Corporation
- 当前专利权人: SanDisk Corporation
- 当前专利权人地址: US CA Milpitas
- 代理机构: Vierra Magen Marcus & DeNiro LLP
- 主分类号: H01L23/48
- IPC分类号: H01L23/48
摘要:
A semiconductor device and methods of forming same are disclosed having multiple die redistribution layer. After fabrication of semiconductor die on a wafer and prior to singulation from the wafer, adjacent semiconductor die are paired together and a redistribution layer may be formed across the die pair. The redistribution layer may be used to redistribute at least a portion of the bond pads from the first die in the pair to a second die in the pair. One die in each pair will be a working die and the other die in each pair will be a dummy die. The function of the integrated circuit beneath the redistribution layer on the dummy die is at least partially sacrificed.
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