发明授权
- 专利标题: Method of fabricating a semiconductor light-emitting device
- 专利标题(中): 制造半导体发光器件的方法
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申请号: US12098309申请日: 2008-04-04
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公开(公告)号: US07795059B2公开(公告)日: 2010-09-14
- 发明人: Shinji Saito , Shinya Nunoue
- 申请人: Shinji Saito , Shinya Nunoue
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2005-036573 20050214
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A semiconductor light-emitting element has a laminated section which has an active layer made of a semiconductor, and first and second clad layers each being disposed to sandwich the active layer and made of a semiconductor, a pair of first high-reflection layers each being disposed to sandwich the active layer in a first direction orthogonal to the laminated direction of the laminated section, and a low-reflection layer and a second high-reflection layer each being disposed to sandwich the active layer in a second direction orthogonal to the laminated direction and crossing to the first direction.
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