发明授权
- 专利标题： Method for fabricating device structures having a variation in electrical conductivity
- 专利标题（中）： 制造具有导电性变化的器件结构的方法
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申请号： US12030598申请日： 2008-02-13
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公开(公告)号： US07795104B2公开(公告)日： 2010-09-14
- 发明人: Elgin Kiok Boone Quek , Lee Wee Teo , Shyue Seng Tan
- 申请人： Elgin Kiok Boone Quek , Lee Wee Teo , Shyue Seng Tan
- 申请人地址： SG Singapore
- 专利权人： Chartered Semiconductor Manufacturing Ltd.
- 当前专利权人： Chartered Semiconductor Manufacturing Ltd.
- 当前专利权人地址： SG Singapore
- 代理机构： Brinks Hofer Gilson & Lione
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method for forming device structures having a variation in electrical conductivity includes forming a device structure and a radiation absorbing layer overlying the device structure. The radiation absorbing layer has a spatial variation and radiation absorbing characteristics, such that upon irradiating the device structure, the radiation absorbing layer attenuates the intensity of the radiation so that a variation in dopant activation takes place within the device structure. Accordingly, device structures are formed having a variation in electrical resistance independent of the physical size of the device structures.