Invention Grant
- Patent Title: High-speed buffer circuit, system and method
- Patent Title (中): 高速缓冲电路,系统及方法
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Application No.: US12009144Application Date: 2008-01-15
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Publication No.: US07795917B2Publication Date: 2010-09-14
- Inventor: Sebastien Barasinski , Cyrille Dray
- Applicant: Sebastien Barasinski , Cyrille Dray
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics SA
- Current Assignee: STMicroelectronics SA
- Current Assignee Address: FR Montrouge
- Agency: Graybeal Jackson LLP
- Agent Lisa K. Jorgenson; Paul F. Rusyn
- Priority: FR0700267 20070115
- Main IPC: H03K19/0175
- IPC: H03K19/0175 ; H03B1/00

Abstract:
A buffer circuit includes at least one part that is powered by a supply voltage by means of a first initialization transistor, and connected to the ground by means of a second initialization transistor. The circuit is capable of transferring, between an input and an output, an input signal including at least one rising edge and/or one falling edge. The circuit includes a first CMOS inverter, of which the input is connected to the input of the circuit, and of which the output is mounted in series with the input of a second CMOS inverter, with the output of the second CMOS inverter being connected to the output of the circuit. A circuit creates an overvoltage on one of the two inverters during operation.
Public/Granted literature
- US20080218211A1 High-speed buffer circuit, system and method Public/Granted day:2008-09-11
Information query
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