发明授权
- 专利标题: Ion concentration transistor and dual-mode sensors
- 专利标题(中): 离子浓度晶体管和双模传感器
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申请号: US12476329申请日: 2009-06-02
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公开(公告)号: US07799205B2公开(公告)日: 2010-09-21
- 发明人: Arkadiy Morgenshtein , Uri Dinnar , Yael Nemirovsky
- 申请人: Arkadiy Morgenshtein , Uri Dinnar , Yael Nemirovsky
- 申请人地址: IL Haifa
- 专利权人: Technion Research & Development Foundation Ltd.
- 当前专利权人: Technion Research & Development Foundation Ltd.
- 当前专利权人地址: IL Haifa
- 主分类号: G01N27/414
- IPC分类号: G01N27/414 ; G01N27/26
摘要:
An ion concentration sensor produces a signal reflective of the ion concentration within a solution. The ion concentration sensor is based on an ion sensitive transistor having a solution input, a reference input, a diffusion input, and a diffusion output. The ion sensitive transistor is connected as a pass transistor, such that the diffusion output provides an electrical signal indicating an ion concentration in a solution contacting the solution input.
公开/授权文献
- US20090294653A1 ION CONCENTRATION TRANSISTOR AND DUAL-MODE SENSORS 公开/授权日:2009-12-03
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