发明授权
- 专利标题： Neutral beam-assisted atomic layer chemical vapor deposition apparatus and method of processing substrate using the same
- 专利标题（中）： 中性束辅助原子层化学气相沉积装置及其处理方法
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申请号： US12031498申请日： 2008-02-14
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公开(公告)号： US07799706B2公开(公告)日： 2010-09-21
- 发明人: Geun-young Yeom , Byoung-jae Park , Sung-woo Kim , Jong-tae Lim
- 申请人： Geun-young Yeom , Byoung-jae Park , Sung-woo Kim , Jong-tae Lim
- 申请人地址： KR Gyeonggi-do
- 专利权人： Sungkyunkwan University Foundation for Corporate Collaboration
- 当前专利权人： Sungkyunkwan University Foundation for Corporate Collaboration
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2008-0012330 20080211
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469
摘要：
A neutral beam-assisted atomic layer chemical vapor deposition (ALCVD) apparatus is provided for uniformly depositing an oxide layer filling a planarization layer or a trench to increase uniformity and density of the oxide layer using neutral beams generated by a neutral beam generator without a seam or void occurring in an atomic layer deposition (ALD) or ALD-like chemical vapor deposition (CVD) process, thereby solving problems on the void or seam and low density occurring when a high-density planarization layer or a shallow trench having a width of 65 nm or less is formed, and improving a next generation oxide layer isolation process. The neutral beam-assisted ALCVD apparatus includes: an ALCVD apparatus, which deposits an oxide layer in order to form a pattern in a semiconductor substrate; and a neutral beam generator, which converts ion beams to neutral beams in order to remove a seam or void in the oxide layer deposited between the patterns, and applies the neutral beams to the oxide layer deposited to form the pattern.