发明授权
- 专利标题： Semiconductor ESD device and method of making same
- 专利标题（中）： 半导体ESD器件及其制造方法
-
申请号： US12138208申请日： 2008-06-12
-
公开(公告)号： US07800128B2公开(公告)日： 2010-09-21
- 发明人: Krzysztof Domanski , Cornelius Christian Russ , Kai Esmark
- 申请人： Krzysztof Domanski , Cornelius Christian Russ , Kai Esmark
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L29/72
- IPC分类号： H01L29/72 ; H01L29/74 ; H01L27/01 ; H01L27/12
摘要：
A semiconductor device includes an SCR ESD device region disposed within a semiconductor body, and a plurality of first device regions of the first conductivity type disposed on a second device region of the second conductivity type, where the second conductivity type is opposite the first conductivity type. Also included is a plurality of third device regions having a sub-region of the first conductivity type and a sub-region of the second conductivity type disposed on the second device region. The first regions and second regions are distributed such that the third regions are not directly adjacent to each other. A fourth device region of the first conductivity type adjacent to the second device region and a fifth device region of the second conductivity type disposed within the fourth device region are also included.
公开/授权文献
- US20090309129A1 Semiconductor ESD Device and Method of Making Same 公开/授权日：2009-12-17
信息查询
IPC分类:
