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公开(公告)号：US08471292B2
公开(公告)日：2013-06-25
申请号：US13464464
申请日：2012-05-04
CPC分类号： H01L27/0262 , H01L21/82 , H01L27/0248 , H01L27/0255 , H01L27/0259 , H01L29/74 , H01L29/7436 , H01L2924/13034
摘要： A semiconductor device includes an SCR ESD device region disposed within a semiconductor body, and a plurality of first device regions of the first conductivity type disposed on a second device region of the second conductivity type, where the second conductivity type is opposite the first conductivity type. Also included is a plurality of third device regions having a sub-region of the first conductivity type and a sub-region of the second conductivity type disposed on the second device region. The first regions and second regions are distributed such that the third regions are not directly adjacent to each other. A fourth device region of the first conductivity type adjacent to the second device region and a fifth device region of the second conductivity type disposed within the fourth device region are also included.
摘要翻译： 半导体器件包括设置在半导体本体内的SCR ESD器件区域，以及设置在第二导电类型的第二器件区域上的第一导电类型的多个第一器件区域，其中第二导电类型与第一导电类型相反 。 还包括具有第一导电类型的子区域和设置在第二器件区域上的第二导电类型的子区域的多个第三器件区域。 第一区域和第二区域分布成使得第三区域不直接相邻。 还包括与第二器件区域相邻的第一导电类型的第四器件区域和布置在第四器件区域内的第二导电类型的第五器件区域。
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公开(公告)号：US20100321843A1
公开(公告)日：2010-12-23
申请号：US12872402
申请日：2010-08-31
IPC分类号： H02H9/04 , H01L21/761
CPC分类号： H01L27/0262 , H01L21/82 , H01L27/0248 , H01L27/0255 , H01L27/0259 , H01L29/74 , H01L29/7436 , H01L2924/13034
摘要： A semiconductor device includes an SCR ESD device region disposed within a semiconductor body, and a plurality of first device regions of the first conductivity type disposed on a second device region of the second conductivity type, where the second conductivity type is opposite the first conductivity type. Also included is a plurality of third device regions having a sub-region of the first conductivity type and a sub-region of the second conductivity type disposed on the second device region. The first regions and second regions are distributed such that the third regions are not directly adjacent to each other. A fourth device region of the first conductivity type adjacent to the second device region and a fifth device region of the second conductivity type disposed within the fourth device region are also included.
摘要翻译： 半导体器件包括设置在半导体本体内的SCR ESD器件区域，以及设置在第二导电类型的第二器件区域上的第一导电类型的多个第一器件区域，其中第二导电类型与第一导电类型相反 。 还包括具有第一导电类型的子区域和设置在第二器件区域上的第二导电类型的子区域的多个第三器件区域。 第一区域和第二区域分布成使得第三区域不直接相邻。 还包括与第二器件区域相邻的第一导电类型的第四器件区域和布置在第四器件区域内的第二导电类型的第五器件区域。
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公开(公告)号：US20120218671A1
公开(公告)日：2012-08-30
申请号：US13464464
申请日：2012-05-04
IPC分类号： H02H9/04 , H01L21/331
CPC分类号： H01L27/0262 , H01L21/82 , H01L27/0248 , H01L27/0255 , H01L27/0259 , H01L29/74 , H01L29/7436 , H01L2924/13034
摘要： A semiconductor device includes an SCR ESD device region disposed within a semiconductor body, and a plurality of first device regions of the first conductivity type disposed on a second device region of the second conductivity type, where the second conductivity type is opposite the first conductivity type. Also included is a plurality of third device regions having a sub-region of the first conductivity type and a sub-region of the second conductivity type disposed on the second device region. The first regions and second regions are distributed such that the third regions are not directly adjacent to each other. A fourth device region of the first conductivity type adjacent to the second device region and a fifth device region of the second conductivity type disposed within the fourth device region are also included.
摘要翻译： 半导体器件包括设置在半导体本体内的SCR ESD器件区域，以及设置在第二导电类型的第二器件区域上的第一导电类型的多个第一器件区域，其中第二导电类型与第一导电类型相反 。 还包括具有第一导电类型的子区域和设置在第二器件区域上的第二导电类型的子区域的多个第三器件区域。 第一区域和第二区域分布成使得第三区域不直接相邻。 还包括与第二器件区域相邻的第一导电类型的第四器件区域和布置在第四器件区域内的第二导电类型的第五器件区域。
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公开(公告)号：US07800128B2
公开(公告)日：2010-09-21
申请号：US12138208
申请日：2008-06-12
CPC分类号： H01L27/0262 , H01L21/82 , H01L27/0248 , H01L27/0255 , H01L27/0259 , H01L29/74 , H01L29/7436 , H01L2924/13034
摘要： A semiconductor device includes an SCR ESD device region disposed within a semiconductor body, and a plurality of first device regions of the first conductivity type disposed on a second device region of the second conductivity type, where the second conductivity type is opposite the first conductivity type. Also included is a plurality of third device regions having a sub-region of the first conductivity type and a sub-region of the second conductivity type disposed on the second device region. The first regions and second regions are distributed such that the third regions are not directly adjacent to each other. A fourth device region of the first conductivity type adjacent to the second device region and a fifth device region of the second conductivity type disposed within the fourth device region are also included.
摘要翻译： 半导体器件包括设置在半导体本体内的SCR ESD器件区域，以及设置在第二导电类型的第二器件区域上的第一导电类型的多个第一器件区域，其中第二导电类型与第一导电类型相反 。 还包括具有第一导电类型的子区域和设置在第二器件区域上的第二导电类型的子区域的多个第三器件区域。 第一区域和第二区域分布成使得第三区域不直接相邻。 还包括与第二器件区域相邻的第一导电类型的第四器件区域和布置在第四器件区域内的第二导电类型的第五器件区域。
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公开(公告)号：US08178897B2
公开(公告)日：2012-05-15
申请号：US12872402
申请日：2010-08-31
IPC分类号： H01L29/66
CPC分类号： H01L27/0262 , H01L21/82 , H01L27/0248 , H01L27/0255 , H01L27/0259 , H01L29/74 , H01L29/7436 , H01L2924/13034
摘要： A semiconductor device includes an SCR ESD device region disposed within a semiconductor body, and a plurality of first device regions of the first conductivity type disposed on a second device region of the second conductivity type, where the second conductivity type is opposite the first conductivity type. Also included is a plurality of third device regions having a sub-region of the first conductivity type and a sub-region of the second conductivity type disposed on the second device region. The first regions and second regions are distributed such that the third regions are not directly adjacent to each other. A fourth device region of the first conductivity type adjacent to the second device region and a fifth device region of the second conductivity type disposed within the fourth device region are also included.
摘要翻译： 半导体器件包括设置在半导体本体内的SCR ESD器件区域，以及设置在第二导电类型的第二器件区域上的第一导电类型的多个第一器件区域，其中第二导电类型与第一导电类型相反 。 还包括具有第一导电类型的子区域和设置在第二器件区域上的第二导电类型的子区域的多个第三器件区域。 第一区域和第二区域分布成使得第三区域不直接相邻。 还包括与第二器件区域相邻的第一导电类型的第四器件区域和布置在第四器件区域内的第二导电类型的第五器件区域。
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公开(公告)号：US20090309129A1
公开(公告)日：2009-12-17
申请号：US12138208
申请日：2008-06-12
CPC分类号： H01L27/0262 , H01L21/82 , H01L27/0248 , H01L27/0255 , H01L27/0259 , H01L29/74 , H01L29/7436 , H01L2924/13034
摘要： A semiconductor device includes an SCR ESD device region disposed within a semiconductor body, and a plurality of first device regions of the first conductivity type disposed on a second device region of the second conductivity type, where the second conductivity type is opposite the first conductivity type. Also included is a plurality of third device regions having a sub-region of the first conductivity type and a sub-region of the second conductivity type disposed on the second device region. The first regions and second regions are distributed such that the third regions are not directly adjacent to each other. A fourth device region of the first conductivity type adjacent to the second device region and a fifth device region of the second conductivity type disposed within the fourth device region are also included.
摘要翻译： 半导体器件包括设置在半导体本体内的SCR ESD器件区域，以及设置在第二导电类型的第二器件区域上的第一导电类型的多个第一器件区域，其中第二导电类型与第一导电类型相反 。 还包括具有第一导电类型的子区域和设置在第二器件区域上的第二导电类型的子区域的多个第三器件区域。 第一区域和第二区域分布成使得第三区域不直接相邻。 还包括与第二器件区域相邻的第一导电类型的第四器件区域和布置在第四器件区域内的第二导电类型的第五器件区域。
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公开(公告)号：US07985983B2
公开(公告)日：2011-07-26
申请号：US12769021
申请日：2010-04-28
CPC分类号： H01L29/735 , H01L27/0262 , H01L29/0615 , H01L29/0619 , H01L29/0692 , H01L29/41708 , H01L29/456 , H01L29/732 , H01L29/7436
摘要： A semiconductor device includes an ESD device region disposed within a semiconductor body of a first semiconductor type, an isolation region surrounding the ESD device region, a first doped region of a second conductivity type disposed at a surface of the semiconductor body within the ESD region, and a second doped region of the first conductivity type disposed between the semiconductor body within the ESD region and at least a portion of the first doped region, where the doping concentration of the second doped region is higher than the semiconductor body. A third doped region of the second semiconductor type is disposed on the semiconductor body and a fourth region of the first conductivity type is disposed over the third doped region. A fifth doped region of the second conductivity type is disposed on the semiconductor body. A trigger device and an SCR is formed therefrom.
摘要翻译： 半导体器件包括设置在第一半导体类型的半导体本体内的ESD器件区域，围绕ESD器件区域的隔离区域，设置在ESD区域内的半导体本体的表面处的第二导电类型的第一掺杂区域， 以及设置在ESD区域内的半导体本体与第一掺杂区域的至少一部分之间的第一导电类型的第二掺杂区域，其中第二掺杂区域的掺杂浓度高于半导体本体。 第二半导体类型的第三掺杂区域设置在半导体本体上，并且第一导电类型的第四区域设置在第三掺杂区域上。 第二导电类型的第五掺杂区域设置在半导体本体上。 触发装置和SCR由其形成。
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公开(公告)号：US20100208405A1
公开(公告)日：2010-08-19
申请号：US12769021
申请日：2010-04-28
CPC分类号： H01L29/735 , H01L27/0262 , H01L29/0615 , H01L29/0619 , H01L29/0692 , H01L29/41708 , H01L29/456 , H01L29/732 , H01L29/7436
摘要： A semiconductor device includes an ESD device region disposed within a semiconductor body of a first semiconductor type, an isolation region surrounding the ESD device region, a first doped region of a second conductivity type disposed at a surface of the semiconductor body within the ESD region, and a second doped region of the first conductivity type disposed between the semiconductor body within the ESD region and at least a portion of the first doped region, where the doping concentration of the second doped region is higher than the semiconductor body. A third doped region of the second semiconductor type is disposed on the semiconductor body and a fourth region of the first conductivity type is disposed over the third doped region. A fifth doped region of the second conductivity type is disposed on the semiconductor body. A trigger device and an SCR is formed therefrom.
摘要翻译： 半导体器件包括设置在第一半导体类型的半导体本体内的ESD器件区域，围绕ESD器件区域的隔离区域，设置在ESD区域内的半导体本体的表面处的第二导电类型的第一掺杂区域， 以及设置在ESD区域内的半导体本体与第一掺杂区域的至少一部分之间的第一导电类型的第二掺杂区域，其中第二掺杂区域的掺杂浓度高于半导体本体。 第二半导体类型的第三掺杂区域设置在半导体本体上，并且第一导电类型的第四区域设置在第三掺杂区域上。 第二导电类型的第五掺杂区域设置在半导体本体上。 触发装置和SCR由其形成。
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公开(公告)号：US20080179624A1
公开(公告)日：2008-07-31
申请号：US11698674
申请日：2007-01-26
IPC分类号： H01L29/74 , H01L21/332
CPC分类号： H01L29/735 , H01L27/0262 , H01L29/0615 , H01L29/0619 , H01L29/0692 , H01L29/41708 , H01L29/456 , H01L29/732 , H01L29/7436
摘要： A semiconductor device includes an ESD device region disposed within a semiconductor body of a first semiconductor type, an isolation region surrounding the ESD device region, a first doped region of a second conductivity type disposed at a surface of the semiconductor body within the ESD region, and a second doped region of the first conductivity type disposed between the semiconductor body within the ESD region and at least a portion of the first doped region, where the doping concentration of the second doped region is higher than the semiconductor body. A third doped region of the second semiconductor type is disposed on the semiconductor body and a fourth region of the first conductivity type is disposed over the third doped region. A fifth doped region of the second conductivity type is disposed on the semiconductor body. A trigger device and an SCR is formed therefrom.
摘要翻译： 半导体器件包括设置在第一半导体类型的半导体本体内的ESD器件区域，围绕ESD器件区域的隔离区域，设置在ESD区域内的半导体本体的表面处的第二导电类型的第一掺杂区域， 以及设置在ESD区域内的半导体本体与第一掺杂区域的至少一部分之间的第一导电类型的第二掺杂区域，其中第二掺杂区域的掺杂浓度高于半导体本体。 第二半导体类型的第三掺杂区域设置在半导体本体上，并且第一导电类型的第四区域设置在第三掺杂区域上。 第二导电类型的第五掺杂区域设置在半导体本体上。 触发装置和SCR由其形成。
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公开(公告)号：US07732834B2
公开(公告)日：2010-06-08
申请号：US11698674
申请日：2007-01-26
IPC分类号： H01L29/74
CPC分类号： H01L29/735 , H01L27/0262 , H01L29/0615 , H01L29/0619 , H01L29/0692 , H01L29/41708 , H01L29/456 , H01L29/732 , H01L29/7436
摘要： A semiconductor device includes an ESD device region disposed within a semiconductor body of a first semiconductor type, an isolation region surrounding the ESD device region, a first doped region of a second conductivity type disposed at a surface of the semiconductor body within the ESD region, and a second doped region of the first conductivity type disposed between the semiconductor body within the ESD region and at least a portion of the first doped region, where the doping concentration of the second doped region is higher than the semiconductor body. A third doped region of the second semiconductor type is disposed on the semiconductor body and a fourth region of the first conductivity type is disposed over the third doped region. A fifth doped region of the second conductivity type is disposed on the semiconductor body. A trigger device and an SCR is formed therefrom.
摘要翻译： 半导体器件包括设置在第一半导体类型的半导体本体内的ESD器件区域，围绕ESD器件区域的隔离区域，设置在ESD区域内的半导体本体的表面处的第二导电类型的第一掺杂区域， 以及设置在ESD区域内的半导体本体与第一掺杂区域的至少一部分之间的第一导电类型的第二掺杂区域，其中第二掺杂区域的掺杂浓度高于半导体本体。 第二半导体类型的第三掺杂区域设置在半导体本体上，并且第一导电类型的第四区域设置在第三掺杂区域上。 第二导电类型的第五掺杂区域设置在半导体本体上。 触发装置和SCR由其形成。
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