发明授权
- 专利标题： Mask pattern of semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体器件的掩模图案及其制造方法
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申请号： US11880395申请日： 2007-07-20
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公开(公告)号： US07803504B2公开(公告)日： 2010-09-28
- 发明人: Jun Seok Lee
- 申请人： Jun Seok Lee
- 申请人地址： KR Seoul
- 专利权人： Dongbu HiTek Co., Ltd.
- 当前专利权人： Dongbu HiTek Co., Ltd.
- 当前专利权人地址： KR Seoul
- 代理机构： The Law Offices of Andrew D. Fortney
- 代理商 Andrew D. Fortney
- 优先权： KR10-2006-0068528 20060721
- 主分类号： G03F1/00
- IPC分类号： G03F1/00
摘要：
Provided is a mask pattern of a semiconductor device. The mask pattern includes a plurality of main patterns and a plurality of assistance patterns. The main patterns are adjacent to one another. The assistance pattern is disposed on at least one of an end portion and a middle portion of each of the main patterns and has a line width greater than that of the main pattern. The assistance patterns are staggered.