Invention Grant
- Patent Title: Multilevel imprint lithography
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Application No.: US11636264Application Date: 2006-12-07
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Publication No.: US07803712B2Publication Date: 2010-09-28
- Inventor: Pavel Kornilovich , Yong Chen , Duncan Stewart , R. Stanley Williams , Philip J. Kuekes , Mehmet Fatih Yanik
- Applicant: Pavel Kornilovich , Yong Chen , Duncan Stewart , R. Stanley Williams , Philip J. Kuekes , Mehmet Fatih Yanik
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: H01L21/308
- IPC: H01L21/308

Abstract:
A mold with a protruding pattern is provided that is pressed into a thin polymer film via an imprinting process. Controlled connections between nanowires and microwires and other lithographically-made elements of electronic circuitry are provided. An imprint stamp is configured to form arrays of approximately parallel nanowires which have (1) micro dimensions in the X direction, (2) nano dimensions and nano spacing in the Y direction, and three or more distinct heights in the Z direction. The stamp thus formed can be used to connect specific individual nanowires to specific microscopic regions of microscopic wires or pads. The protruding pattern in the mold creates recesses in the thin polymer film, so the polymer layer acquires the reverse of the pattern on the mold. After the mold is removed, the film is processed such that the polymer pattern can be transferred on a metal/semiconductor pattern on the substrate.
Public/Granted literature
- US20100112809A1 Multilevel imprint lithography Public/Granted day:2010-05-06
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