- 专利标题: Multilevel imprint lithography
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申请号: US11636264申请日: 2006-12-07
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公开(公告)号: US07803712B2公开(公告)日: 2010-09-28
- 发明人: Pavel Kornilovich , Yong Chen , Duncan Stewart , R. Stanley Williams , Philip J. Kuekes , Mehmet Fatih Yanik
- 申请人: Pavel Kornilovich , Yong Chen , Duncan Stewart , R. Stanley Williams , Philip J. Kuekes , Mehmet Fatih Yanik
- 申请人地址: US TX Houston
- 专利权人: Hewlett-Packard Development Company, L.P.
- 当前专利权人: Hewlett-Packard Development Company, L.P.
- 当前专利权人地址: US TX Houston
- 主分类号: H01L21/308
- IPC分类号: H01L21/308
摘要:
A mold with a protruding pattern is provided that is pressed into a thin polymer film via an imprinting process. Controlled connections between nanowires and microwires and other lithographically-made elements of electronic circuitry are provided. An imprint stamp is configured to form arrays of approximately parallel nanowires which have (1) micro dimensions in the X direction, (2) nano dimensions and nano spacing in the Y direction, and three or more distinct heights in the Z direction. The stamp thus formed can be used to connect specific individual nanowires to specific microscopic regions of microscopic wires or pads. The protruding pattern in the mold creates recesses in the thin polymer film, so the polymer layer acquires the reverse of the pattern on the mold. After the mold is removed, the film is processed such that the polymer pattern can be transferred on a metal/semiconductor pattern on the substrate.
公开/授权文献
- US20100112809A1 Multilevel imprint lithography 公开/授权日:2010-05-06
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