Invention Grant
US07804157B2 Device configured to have a nanowire formed laterally between two electrodes and methods for forming the same
失效
被配置为具有在两个电极之间横向形成的纳米线的器件及其形成方法
- Patent Title: Device configured to have a nanowire formed laterally between two electrodes and methods for forming the same
- Patent Title (中): 被配置为具有在两个电极之间横向形成的纳米线的器件及其形成方法
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Application No.: US11454446Application Date: 2006-06-16
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Publication No.: US07804157B2Publication Date: 2010-09-28
- Inventor: Shashank Sharma , Theodore I. Kamins
- Applicant: Shashank Sharma , Theodore I. Kamins
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: H01L29/861
- IPC: H01L29/861

Abstract:
A device configured to have a nanowire formed laterally between two electrodes includes a substrate and an insulator layer established on at least a portion of the substrate. An electrode of a first conductivity type and an electrode of a second conductivity type different than the first conductivity type are established at least on the insulator layer. The electrodes are electrically isolated from each other. The electrode of the first conductivity type has a vertical sidewall that faces a vertical sidewall of the electrode of the second conductivity type, whereby a gap is located between the two vertical sidewalls. Methods are also disclosed for forming the device.
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