发明授权
- 专利标题: Epitaxial oxide film, piezoelectric film, piezoelectric film element, liquid discharge head using the piezoelectric film element, and liquid discharge apparatus
- 专利标题(中): 外延氧化膜,压电膜,压电膜元件,使用压电膜元件的液体排出头以及液体排出装置
-
申请号: US11677267申请日: 2007-02-21
-
公开(公告)号: US07804231B2公开(公告)日: 2010-09-28
- 发明人: Toshihiro Ifuku , Katsumi Aoki , Takanori Matsuda , Hiroshi Funakubo , Shintaro Yokoyama , Yong Kwan Kim , Hiroshi Nakaki , Rikyu Ikariyama
- 申请人: Toshihiro Ifuku , Katsumi Aoki , Takanori Matsuda , Hiroshi Funakubo , Shintaro Yokoyama , Yong Kwan Kim , Hiroshi Nakaki , Rikyu Ikariyama
- 申请人地址: JP Tokyo JP Tokyo
- 专利权人: Canon Kabushiki Kaisha,Tokyo Institute of Technology
- 当前专利权人: Canon Kabushiki Kaisha,Tokyo Institute of Technology
- 当前专利权人地址: JP Tokyo JP Tokyo
- 代理机构: Fitzpatrick, Cella, Harper & Scinto
- 优先权: JP2005-257133 20050905; JP2006-076667 20060320; JP2006-231238 20060828
- 主分类号: H01L41/187
- IPC分类号: H01L41/187
摘要:
Provided are a piezoelectric film, a piezoelectric film element, a liquid discharge head using the piezoelectric film element, and a liquid discharge apparatus. A piezoelectric film element that can be suitably used for a discharge pressure-generating element of a liquid discharge head is obtained by using an epitaxial oxide film composed of a perovskite composite oxide constituted according to a general formula ABO3 as a piezoelectric film. The epitaxial oxide film has at least an A domain and a B domain having a crystal orientation deviation with respect to each other. The crystal orientation deviation between the A domain and the B domain is less than 2°.
公开/授权文献
信息查询
IPC分类: