Invention Grant
- Patent Title: Low noise amplifier
- Patent Title (中): 低噪声放大器
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Application No.: US12195615Application Date: 2008-08-21
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Publication No.: US07804361B2Publication Date: 2010-09-28
- Inventor: Hyung-sun Lim , Jin-soo Park , Heung-bae Lee , Young-eil Kim , Sang-yoon Jeon , Ick-jin Kwon , Bum-man Kim , Je-hyung Yoon
- Applicant: Hyung-sun Lim , Jin-soo Park , Heung-bae Lee , Young-eil Kim , Sang-yoon Jeon , Ick-jin Kwon , Bum-man Kim , Je-hyung Yoon
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics, Co., Ltd.
- Current Assignee: Samsung Electronics, Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2008-0016496 20080222
- Main IPC: H03F3/45
- IPC: H03F3/45
Abstract:
A low noise amplifier is provided. The low noise amplifier includes: a low noise amplifying unit amplifying an input signal; a harmonic and noise generating unit disposed in an input terminal of the low noise amplifying unit, for generating a compensating signal for compensating for an intermodulation distortion signal and a thermal noise signal of the input signal to the low noise amplifying unit; and a load unit outputting the amplified input signal generated by the low noise amplifying unit.
Public/Granted literature
- US20090212861A1 LOW NOISE AMPLIFIER Public/Granted day:2009-08-27
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