发明授权
- 专利标题： Method to address carbon incorporation in an interpoly oxide
- 专利标题（中）： 解决二氧化硅中碳掺入的方法
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申请号： US10951997申请日： 2004-09-28
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公开(公告)号： US07806988B2公开(公告)日： 2010-10-05
- 发明人: Niraj Rana , Kevin R. Shea
- 申请人： Niraj Rana , Kevin R. Shea
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Wells St. John P.S.
- 主分类号： B08B3/00
- IPC分类号： B08B3/00 ; B08B7/00
摘要：
A method of removing a mask and addressing interfacial carbon chemisbored in a semiconductor wafer starts with placing the semiconductor wafer into a dry strip chamber. The dry stripping process is performed to remove the mask on the semiconductor wafer. The semiconductor wafer is then subjected to a cleaning solution to perform a cleaning process to remove particles on the surface of the semiconductor wafer and to address the interfacial carbon. The cleaning solution being either water containing ozone (O3) and ammonia (NH3), or a solution of hot phosphoric acid (H3PO4).
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