发明授权
- 专利标题: Microelectromechanical semiconductor component with cavity structure and method for producing the same
- 专利标题(中): 具有腔结构的微机电半导体元件及其制造方法
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申请号: US11701044申请日: 2007-02-01
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公开(公告)号: US07807506B2公开(公告)日: 2010-10-05
- 发明人: Gottfried Beer , Horst Theuss
- 申请人: Gottfried Beer , Horst Theuss
- 申请人地址: DE Neubiberg
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Neubiberg
- 代理机构: Dicke, Billig & Czaja, PLLC
- 优先权: DE102006005419 20060203
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
One aspect of the invention relates to a semiconductor component with cavity structure and a method for producing the same. The semiconductor component has an active semiconductor chip with the microelectromechanical structure and a wiring structure on its top side. The microelectromechanical structure is surrounded by walls of at least one cavity. A covering, which covers the cavity, is arranged on the walls. The walls have a photolithographically patterned polymer. The covering has a layer with a polymer of identical type. In one case, the molecular chains of the polymer of the walls are crosslinked with the molecular chains of the polymer layer of the covering layer to form a dimensionally stable cavity housing.
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