发明授权
- 专利标题： Semiconductor device having storage node electrode with protection film thereon and method of fabricating the same
- 专利标题（中）： 具有保护膜的存储节点电极的半导体装置及其制造方法
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申请号： US11562369申请日： 2006-11-21
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公开(公告)号： US07807542B2公开(公告)日： 2010-10-05
- 发明人: Joo-Byoung Yoon , Jin-Sung Kim , Kyung-Woo Lee , Yeong-Cheol Lee , Sang-Jun Park , Hye-Sun Kim
- 申请人： Joo-Byoung Yoon , Jin-Sung Kim , Kyung-Woo Lee , Yeong-Cheol Lee , Sang-Jun Park , Hye-Sun Kim
- 申请人地址： KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- 代理机构： Muir Patent Consulting, PLLC
- 优先权： KR10-2005-0111995 20051122
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A highly reliable semiconductor device and a method fabricating the same are provided, the semiconductor device having a low resistance electrode structure. The semiconductor device includes an interlayer insulation film formed on a semiconductor substrate. A storage node electrode is formed on the interlayer insulation film. A protection film is formed on the storage node electrode and includes a nitrided metal film. A dielectric film overlies the protection film. A plate electrode is formed on the dielectric film.
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