Invention Grant
- Patent Title: Plasma processing apparatus and plasma processing method
- Patent Title (中): 等离子体处理装置和等离子体处理方法
-
Application No.: US11683014Application Date: 2007-03-07
-
Publication No.: US07807581B2Publication Date: 2010-10-05
- Inventor: Susumu Tauchi , Akitaka Makino , Seiichi Watanabe , Naoki Yasui
- Applicant: Susumu Tauchi , Akitaka Makino , Seiichi Watanabe , Naoki Yasui
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
The present invention provides a plasma processing apparatus or a plasma processing method that can etch a multilayer film structure for constituting a gate structure with high accuracy and high efficiency. A plasma processing method of, on processing a sample on a sample stage 112 in a depressurized discharge room 117, etching a multilayer film (including a high-k and a metal gate) at 0.1 Pa or less and with the sample stage 112 temperature-regulated by using a pressure gauge 133 to be used for pressure regulation and connected to the processing room and a main pump for exhaustion 130.
Public/Granted literature
- US20080217295A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD Public/Granted day:2008-09-11
Information query
IPC分类:
