发明授权
- 专利标题： Plasma processing apparatus and plasma processing method
- 专利标题（中）： 等离子体处理装置和等离子体处理方法
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申请号： US11683014申请日： 2007-03-07
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公开(公告)号： US07807581B2公开(公告)日： 2010-10-05
- 发明人: Susumu Tauchi , Akitaka Makino , Seiichi Watanabe , Naoki Yasui
- 申请人： Susumu Tauchi , Akitaka Makino , Seiichi Watanabe , Naoki Yasui
- 申请人地址： JP Tokyo
- 专利权人： Hitachi High-Technologies Corporation
- 当前专利权人： Hitachi High-Technologies Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP.
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
The present invention provides a plasma processing apparatus or a plasma processing method that can etch a multilayer film structure for constituting a gate structure with high accuracy and high efficiency. A plasma processing method of, on processing a sample on a sample stage 112 in a depressurized discharge room 117, etching a multilayer film (including a high-k and a metal gate) at 0.1 Pa or less and with the sample stage 112 temperature-regulated by using a pressure gauge 133 to be used for pressure regulation and connected to the processing room and a main pump for exhaustion 130.
公开/授权文献
- US20080217295A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 公开/授权日：2008-09-11