Invention Grant
- Patent Title: Ion implanters
- Patent Title (中): 离子注入机
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Application No.: US12003852Application Date: 2008-01-02
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Publication No.: US07807984B2Publication Date: 2010-10-05
- Inventor: Gregory Robert Alcott , Adrian Murrell , Matthew Castle , Martin Hilkene
- Applicant: Gregory Robert Alcott , Adrian Murrell , Matthew Castle , Martin Hilkene
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Boult Wade Tennant Dykema Gossett, PLLC
- Main IPC: H01J37/304
- IPC: H01J37/304

Abstract:
Components in an ion implanter that may see incidence of the ion beam include a chamber having an elongate slot opening defined by edges so that a central portion of the ion beam enters the component through the opening with the edges clipping at least a peripheral portion of the ion beam. The arrangement mitigates the problem of sputtered material escaping back out from the component and becoming entrained in the ion beam.
Public/Granted literature
- US20090166565A1 Ion implanters Public/Granted day:2009-07-02
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