发明授权
- 专利标题： Electric field read/write head, method of manufacturing the same, and information storage device comprising the electric field read/write head
- 专利标题（中）： 电场读/写头，其制造方法以及包括电场读/写头的信息存储装置
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申请号： US11957511申请日： 2007-12-17
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公开(公告)号： US07808025B2公开(公告)日： 2010-10-05
- 发明人: Hyoung-soo Ko , Chul-min Park , Ju-hwan Jung , Seung-bum Hong , Dae-young Jeon
- 申请人： Hyoung-soo Ko , Chul-min Park , Ju-hwan Jung , Seung-bum Hong , Dae-young Jeon
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 代理机构： Sughrue Mion, PLLC
- 优先权： KR10-2007-0071286 20070716
- 主分类号： G11B9/00
- IPC分类号： G11B9/00 ; G11B5/37
摘要：
An electric field read/write head, a method of manufacturing the same, and an information storage device including the electric field read/write head are provided. The electric field read/write head includes: a resistance region formed in a substrate which comprises an end surface facing a recording medium; a source and a drain formed in the substrate and disposed on both sides of the resistance region, respectively; and an insulating layer and a write electrode formed sequentially on the resistance region, wherein the length (l) to width (w) ratio (l/w) of the resistance region satisfies (l/w)≧0.2.
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