发明授权
- 专利标题： Semiconductor package including through-hole electrode and light-transmitting substrate
- 专利标题（中）： 半导体封装包括通孔电极和透光衬底
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申请号： US12508293申请日： 2009-07-23
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公开(公告)号： US07808064B2公开(公告)日： 2010-10-05
- 发明人: Atsuko Kawasaki , Mie Matsuo , Ikuko Inoue , Masayuki Ayabe , Masahiro Sekiguchi , Kazumasa Tanida
- 申请人： Atsuko Kawasaki , Mie Matsuo , Ikuko Inoue , Masayuki Ayabe , Masahiro Sekiguchi , Kazumasa Tanida
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2007-338199 20071227
- 主分类号： H01L31/02
- IPC分类号： H01L31/02
摘要：
An imaging element is formed on the first main surface of a semiconductor substrate. An external terminal is formed on the second main surface of the semiconductor substrate. A through-hole electrode is formed in a through hole formed in the semiconductor substrate. A first electrode pad is formed on the through-hole electrode in the first main surface. An interlayer insulating film is formed on the first electrode pad and on the first main surface. A second electrode pad is formed on the interlayer insulating film. A passivation film is formed on the second electrode pad and the interlayer insulating film, and has an opening which exposes a portion of the second electrode pad. A contact plug is formed between the first and second electrode pads in a region which does not overlap the opening when viewed in a direction perpendicular to the surface of the semiconductor substrate.