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    Semiconductor package including through-hole electrode and light-transmitting substrate
    1.
    发明授权
    Semiconductor package including through-hole electrode and light-transmitting substrate 有权
    半导体封装包括通孔电极和透光衬底

    公开(公告)号：US07808064B2

    公开(公告)日：2010-10-05

    申请号：US12508293

    申请日：2009-07-23

    申请人： Atsuko Kawasaki ,  Mie Matsuo ,  Ikuko Inoue ,  Masayuki Ayabe ,  Masahiro Sekiguchi ,  Kazumasa Tanida

    发明人： Atsuko Kawasaki ,  Mie Matsuo ,  Ikuko Inoue ,  Masayuki Ayabe ,  Masahiro Sekiguchi ,  Kazumasa Tanida

    IPC分类号： H01L31/02

    CPC分类号： H01L27/14618 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14636 ,  H01L2224/02372 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/13022 ,  H01L2224/13024 ,  H04N5/2257

    摘要： An imaging element is formed on the first main surface of a semiconductor substrate. An external terminal is formed on the second main surface of the semiconductor substrate. A through-hole electrode is formed in a through hole formed in the semiconductor substrate. A first electrode pad is formed on the through-hole electrode in the first main surface. An interlayer insulating film is formed on the first electrode pad and on the first main surface. A second electrode pad is formed on the interlayer insulating film. A passivation film is formed on the second electrode pad and the interlayer insulating film, and has an opening which exposes a portion of the second electrode pad. A contact plug is formed between the first and second electrode pads in a region which does not overlap the opening when viewed in a direction perpendicular to the surface of the semiconductor substrate.

    摘要翻译： 成像元件形成在半导体衬底的第一主表面上。 外部端子形成在半导体衬底的第二主表面上。 在形成在半导体衬底中的通孔中形成通孔电极。 第一电极焊盘形成在第一主表面中的通孔电极上。 在第一电极焊盘和第一主表面上形成层间绝缘膜。 在层间绝缘膜上形成第二电极焊盘。 在第二电极焊盘和层间绝缘膜上形成钝化膜，并且具有露出第二电极焊盘的一部分的开口。 当在垂直于半导体衬底的表面的方向观察时，在不与开口重叠的区域中，在第一和第二电极焊盘之间形成接触插塞。

    Method of manufacturing semiconductor device
    5.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07538047B2

    公开(公告)日：2009-05-26

    申请号：US11451519

    申请日：2006-06-13

    申请人： Atsuko Kawasaki ,  Takeshi Hoshi ,  Masahiro Kiyotoshi ,  Takatoshi Ono ,  Yoshihiro Ogawa ,  Kaori Umezawa

    发明人： Atsuko Kawasaki ,  Takeshi Hoshi ,  Masahiro Kiyotoshi ,  Takatoshi Ono ,  Yoshihiro Ogawa ,  Kaori Umezawa

    IPC分类号： H01L21/469

    CPC分类号： H01L21/76229 ,  H01L21/76224

    摘要： A method of manufacturing a semiconductor device includes forming a trench for isolation on a surface of a substrate including a semiconductor substrate, filling the trench with a solution containing a perhydrosilazane polymer by applying the solution on the substrate, converting the solution into a film containing the perhydrosilazane polymer by heating the solution, and converting the film into a silicon dioxide film including heating the film at a first temperature in an atmosphere containing vapor, and heating the film heated at the first temperature at a second temperature lower than the first temperature in an atmosphere containing vapor or in pure water.

    摘要翻译： 一种制造半导体器件的方法包括在包括半导体衬底的衬底的表面上形成用于隔离的沟槽，通过将溶液涂覆在衬底上，用含有全氢硅氮烷聚合物的溶液填充沟槽，将溶液转化为含有 通过加热溶液，将膜转化为二氧化硅膜，包括在含有蒸气的气氛中的第一温度下加热该膜，并且在第一温度下在比第一温度低的温度下加热第一温度的膜， 含有蒸汽或纯水的气氛。

    Method for manufacturing a semiconductor device
    6.
    发明授权
    Method for manufacturing a semiconductor device 失效
    半导体器件的制造方法

    公开(公告)号：US07071107B2

    公开(公告)日：2006-07-04

    申请号：US10674382

    申请日：2003-10-01

    申请人： Katsuhiko Hieda ,  Atsuko Kawasaki ,  Masahiro Kiyotoshi ,  Katsuhiko Tachibana ,  Soichi Yamazaki

    发明人： Katsuhiko Hieda ,  Atsuko Kawasaki ,  Masahiro Kiyotoshi ,  Katsuhiko Tachibana ,  Soichi Yamazaki

    IPC分类号： H01L21/302

    CPC分类号： H01L21/02222 ,  H01L21/02164 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02318 ,  H01L21/02337 ,  H01L21/31111 ,  H01L21/3125 ,  H01L21/316 ,  H01L21/31612 ,  H01L21/31683 ,  H01L21/76224 ,  H01L21/76229

    摘要： There is disclosed a method of manufacturing a semiconductor device, wherein an Si3N4 film is formed as a mask member on the surface of a silicon substrate, then etched to form an STI trench. A solution of perhydrogenated silazane polymer is coated on the surface of the silicon substrate having an STI trench formed thereon to deposit a coated film (PSZ film) thereon. The PSZ film deposited on the mask member is removed, leaving part of the PSZ film inside the trench, wherein the thickness of the PSZ film is controlled to make the height thereof from the bottom of the STI trench become 600 nm or less. Thereafter, the PSZ film is heat-treated in a water vapor-containing atmosphere to convert the PSZ film into a silicon oxide film through a chemical reaction of the PSZ film. Subsequently, the silicon oxide film is heat-treated to densify the silicon oxide film.

    摘要翻译： 公开了一种制造半导体器件的方法，其中在硅衬底的表面上形成Si 3 N 4 N 4膜作为掩模构件，然后蚀刻形成 一个STI沟槽。 将过氢化硅氮烷聚合物的溶液涂布在其上形成有STI沟槽的硅衬底的表面上，以在其上沉积涂膜（PSZ膜）。 去除沉积在掩模构件上的PSZ膜，使PSZ膜的一部分留在沟槽内，其中控制PSZ膜的厚度使其从STI沟槽底部的高度变为600nm以下。 然后，在含水蒸汽的气氛中对PSZ膜进行热处理，通过PSZ膜的化学反应将PSZ膜转换为氧化硅膜。 随后，对氧化硅膜进行热处理以使氧化硅膜致密化。

    Compressive hemostatic belt
    7.
    发明授权
    Compressive hemostatic belt 失效
    抗压止血带

    公开(公告)号：US5486194A

    公开(公告)日：1996-01-23

    申请号：US160214

    申请日：1993-12-02

    申请人： Atsuko Kawasaki ,  Takefumi Nakashita ,  Yoshiharu Inui ,  Toshimichi Shirouzu

    发明人： Atsuko Kawasaki ,  Takefumi Nakashita ,  Yoshiharu Inui ,  Toshimichi Shirouzu

    IPC分类号： A61B17/132 ,  A61B17/135 ,  A61F13/00 ,  A61B17/12

    CPC分类号： A61B17/1325 ,  A61B17/135 ,  A61F2013/00468

    摘要： This invention relates to a compressive hemostatic belt wherein a cup-shaped rigid case is attached by an attaching device to a predetermined position on a band made of non-stretchable or low-stretchable fiber, nonwoven fabric or film, and a balloon adapted to be inflated by being filled with fluid is received in the rigid case. Preferably, at least the portion of the band which corresponds to the leg when the band is wrapped around the body is shaped in curve form. Buckles may be attached to the opposite ends of the band and a buckle attaching plate may be attached to the rigid case. One end of the band may be provided with projections so that when the band is wrapped around the body, the other end of the band is thrusted on the projections to fix the band in position. If the band is made of adhesive material, more reliable fixing can be achieved. A check valve adapted to prevent fluid from flowing back from the balloon may be removably connected to the balloon to provide for reuse of the check valve.

    摘要翻译： 本发明涉及一种压缩止血带，其中杯状刚性壳体通过附着装置附接到由不可拉伸或低伸缩纤维，非织造织物或薄膜制成的带上的预定位置，以及适合于 在刚性壳体内容纳充满液体的膨胀物。 优选地，当带缠绕在身体周围时，至少对应于腿的部分被弯曲成形。 带扣可以附接到带的相对端，并且带扣附接板可以附接到刚性壳体。 带的一端可以设置有突起，使得当带缠绕在本体上时，带的另一端被推到突起上以将带固定就位。 如果带由粘合剂材料制成，则可以实现更可靠的固定。 适于防止流体从气囊返回的止回阀可以可移除地连接到气囊以提供止回阀的再利用。

    METHOD FOR PRODUCTION OF HUMAN ERYTHROPOIETIN
    9.
    发明申请
    METHOD FOR PRODUCTION OF HUMAN ERYTHROPOIETIN 审中-公开
    生产人ERYTHROPOIETIN的方法

    公开(公告)号：US20110105734A1

    公开(公告)日：2011-05-05

    申请号：US12517936

    申请日：2006-12-19

    申请人： Atsuko Kawasaki ,  Keisuke Mukai ,  Sei Kirihara

    发明人： Atsuko Kawasaki ,  Keisuke Mukai ,  Sei Kirihara

    IPC分类号： C12P21/00 ,  C07K1/22

    CPC分类号： C07K14/505

    摘要： Disclosed is a method for production of human erythropoietin. By the method, the cells are cultured in a serum-free medium with repetitive medium exchanges, in which medium exchange is carried out either by collecting 80 to 95% of the culture when viable cell density has reached at 2×106˜4×106 cells/mL, or by adjusting the amount of the exchanged medium so that the initial density of the viable cells may be 1.5×105˜2.5×105 cells/mL.

    摘要翻译： 公开了一种生产人促红细胞生成素的方法。 通过该方法，将细胞在具有重复培养基交换的无血清培养基中培养，当存活细胞密度达到2×106〜4×106时，通过收集80〜95％的培养物进行培养基交换 细胞/ mL，或通过调节交换培养基的量使活细胞的初始密度为1.5×105〜2.5×10 5个细胞/ mL。

    Method for manufacturing electronic device
    10.
    发明申请
    Method for manufacturing electronic device 有权
    电子设备制造方法

    公开(公告)号：US20080023442A1

    公开(公告)日：2008-01-31

    申请号：US11826922

    申请日：2007-07-19

    申请人： Shoko Ito ,  Makiko Katano ,  Atsuko Kawasaki ,  Masahiro Kiyotoshi

    发明人： Shoko Ito ,  Makiko Katano ,  Atsuko Kawasaki ,  Masahiro Kiyotoshi

    IPC分类号： C03C25/68 ,  C23C16/00

    CPC分类号： H01L21/67393 ,  H01L21/67253 ,  H01L21/76224 ,  H01L27/115 ,  H01L27/11521 ,  Y10S414/135

    摘要： A method for manufacturing an electronic device using a closed-type transport container, includes: controlling relative humidity inside the closed-type transport container to be lower than ambient relative humidity outside the closed-type transport container on a particular interprocess transport path in which an intermediate product stored in the closed-type transport container is transported from a first manufacturing process to a second manufacturing process. The first manufacturing process allows basic compounds containing nitrogen atoms to be released from the intermediate product. The second manufacturing process is susceptible to degradation due to contamination by the basic compounds.

    摘要翻译： 一种使用封闭式输送容器的电子装置的制造方法，其特征在于，包括：在所述封闭式输送容器内部的相对湿度比所述封闭式输送容器外的环境相对湿度低的特定过程输送路径， 存储在封闭式运输容器中的中间产品从第一制造过程运输到第二制造过程。 第一制造方法允许含有氮原子的碱性化合物从中间产物中释放出来。 第二制造过程由于碱性化合物的污染而易于降解。