发明授权
- 专利标题: Pressure sensor
- 专利标题(中): 压力传感器
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申请号: US12035000申请日: 2008-02-21
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公开(公告)号: US07808365B2公开(公告)日: 2010-10-05
- 发明人: Hirofumi Tojo , Masayuki Yoneda , Tomohisa Tokuda
- 申请人: Hirofumi Tojo , Masayuki Yoneda , Tomohisa Tokuda
- 申请人地址: JP Tokyo
- 专利权人: Yamatake Corporation
- 当前专利权人: Yamatake Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2007-050822 20070228
- 主分类号: H01C10/10
- IPC分类号: H01C10/10
摘要:
A diaphragm is formed at a predetermined location of a sensor chip made of semiconductor material, and a sensor gauge for differential pressure or pressure sensing-use is provided on the sensor chip that includes at least the diaphragm. The sensor gauge has a plurality of sensor gauges synergistically forming a bridge circuit, and are connected to one another with semiconductor resistors, the semiconductor resistors and the sensor gauges are covered with an insulating film, and the number of contact holes, passing through a portion of the insulating film, for electrode line-out use for forming contacts electrically connected to the semiconductor resistors does not exceed the number of sensor gauges.
公开/授权文献
- US20080204185A1 PRESSURE SENSOR 公开/授权日:2008-08-28
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