公开(公告)号：US20120006129A1

公开(公告)日：2012-01-12

申请号：US13176891

申请日：2011-07-06

申请人： Tomohisa Tokuda ,  Yuuichirou Sumiyoshi

发明人： Tomohisa Tokuda ,  Yuuichirou Sumiyoshi

IPC分类号： G01L1/22

CPC分类号： G01L19/147

摘要： Provision of a pressure measuring device having a flexible membrane that receives the pressure; a pedestal, provided with a raised portion having a bottom face that is circular that supports the flexible membrane; and a supporting member that is bonded to the circular bottom face of the raised portion. The flexible membrane is made out of, for example, silicon, and has the (100) face as the primary face. Moreover, the flexible membrane is provided held between a silicon substrate, which is provided with a recessed portion, and a silicon substrate, which is provided with a recessed portion. Because of this, the flexible membrane is held on the pedestal with the silicon substrate interposed therebetween.

摘要翻译： 提供具有接收压力的柔性膜的压力测量装置; 基座，设置有具有支撑柔性膜的圆形的底面的凸起部分; 以及支撑构件，其结合到所述凸起部分的圆形底面。 柔性膜由例如硅制成，并且具有（100）面作为主面。 此外，柔性膜保持在设置有凹部的硅衬底和设置有凹部的硅衬底之间。 因此，柔性膜保持在基座上，硅衬底插入其中。

公开(公告)号：US20100314701A1

公开(公告)日：2010-12-16

申请号：US12740467

申请日：2008-10-29

申请人： Tomohisa Tokuda ,  Hirofumi Tojo

发明人： Tomohisa Tokuda ,  Hirofumi Tojo

IPC分类号： H01L29/84 ,  H01L21/302 ,  H01L21/50

CPC分类号： G01L9/0042 ,  G01L9/0054

摘要： A pressure sensor is provided with a sensor chip having a first semiconductor layer and a second semiconductor layer wherein a pressure-sensitive region is a diaphragm. In the pressure-sensitive region, an open section is formed on the first semiconductor layer, and a recessed section is formed on the second semiconductor layer in the pressure-sensitive region. The recessed section on the second semiconductor layer is larger than the opening section on the first semiconductor layer. An insulating layer may be arranged between the first semiconductor layer and the second semiconductor layer.

摘要翻译： 压力传感器设置有具有第一半导体层和第二半导体层的传感器芯片，其中压敏区域是隔膜。 在压敏区域中，在第一半导体层上形成开口部，在压敏区域的第二半导体层上形成有凹部。 第二半导体层上的凹部比第一半导体层上的开口部大。 绝缘层可以布置在第一半导体层和第二半导体层之间。

公开(公告)号：US20100083766A1

公开(公告)日：2010-04-08

申请号：US12574261

申请日：2009-10-06

申请人： Masayuki Yoneda ,  Tomohisa Tokuda

发明人： Masayuki Yoneda ,  Tomohisa Tokuda

IPC分类号： G01L9/06

CPC分类号： G01L9/0054 ,  G01L9/0042 ,  G01L13/025 ,  G01L15/00

摘要： A pressure sensor according to the present invention comprises: a differential pressure diaphragm, which is provided to a center part of a sensor chip; a differential pressure gauge, which is provided to a perimeter edge part of the differential pressure diaphragm and is formed in radial directions; a differential pressure gauge, which is disposed at a position at which it opposes the differential pressure gauge and, together with the first differential pressure gauge, sandwiches the differential pressure diaphragm and is formed in perimeter directions, which are perpendicular to the radial directions; a differential pressure gauge, which is provided in the vicinity of the differential pressure gauge and is provided in the perimeter directions; a differential pressure gauge, which is disposed at a position at which it opposes the differential pressure gauge and, together with the differential pressure gauge, sandwiches the differential pressure diaphragm and is formed in the radial directions; a static pressure diaphragm, which is disposed at a position that lies in the perimeter directions between the differential pressure gauge and the differential pressure gauge; and a static pressure diaphragm, which is disposed at a position at which it opposes the static pressure diaphragm and, together with the static pressure diaphragm, sandwiches the differential pressure diaphragm.

摘要翻译： 根据本发明的压力传感器包括：差压膜，其设置在传感器芯片的中心部分; 差压表，其设置在压差隔膜的周缘部，并且沿径向方向形成; 差压计设置在与差压表相对的位置处，并与第一差压表一起夹紧差压隔膜，并且在垂直于径向方向的周向形成; 差压表，其设置在差压计附近并沿周向设置; 差压表设置在与差压表相对的位置处，并与差压表一起夹紧差压隔膜并沿径向形成; 静压膜，其设置在位于差压表和压差计之间的周边方向上的位置; 以及设置在与静压隔膜相对的位置并与静压隔膜一起夹紧差压隔膜的静压隔膜。

公开(公告)号：US08161820B2

公开(公告)日：2012-04-24

申请号：US12574075

申请日：2009-10-06

申请人： Masayuki Yoneda ,  Tomohisa Tokuda

发明人： Masayuki Yoneda ,  Tomohisa Tokuda

IPC分类号： G01L9/06

CPC分类号： G01L9/0054 ,  G01L9/065

摘要： A pressure sensor according to the present invention comprises: a differential pressure diaphragm; a static pressure diaphragm, which is provided to an outer perimeter part of the differential pressure diaphragm; a first static pressure gauge pair that is formed in the end part of the static pressure diaphragm and comprises two static pressure gauges, which are disposed such that they sandwich the differential pressure diaphragm; and a second static pressure gauge pair that is formed in the center part of the static pressure diaphragm and comprises two static pressure gauges which are disposed such that they sandwich the differential pressure diaphragm.

摘要翻译： 根据本发明的压力传感器包括：差压隔膜; 静压膜，其设置在差压隔膜的外周部; 第一静压计对，其形成在静压隔膜的端部，并包括两个静压计，它们被设置成它们夹在压差隔膜上; 以及形成在静压隔膜的中心部分的第二静压计对，并且包括两个静压计，它们被设置成使它们夹在差压隔膜上。

公开(公告)号：US07497126B2

公开(公告)日：2009-03-03

申请号：US12035539

申请日：2008-02-22

申请人： Hirofumi Tojo ,  Masayuki Yoneda ,  Tomohisa Tokuda

发明人： Hirofumi Tojo ,  Masayuki Yoneda ,  Tomohisa Tokuda

IPC分类号： G01L9/06

CPC分类号： G01L9/0042

摘要： In a pressure sensor comprising a diaphragm formed on a portion of a chip made of semiconductor material and that senses pressure on the diaphragm by electrically converting the displacement corresponding to that pressure, the provision of the diaphragm with an aspect ratio of at least a size such that the derivative of the characteristic curve of the allowable pressure resistance of the pressure sensor, defined by setting the aspect ratio obtained by dividing the length of one side of the diaphragm by the thickness of the diaphragm as the horizontal axis and by setting the allowable pressure resistance of the pressure sensor as the vertical axis, becomes nearly zero, enables a pressure sensor having high sensitivity and high pressure resistance.

摘要翻译： 在压力传感器中，包括形成在由半导体材料制成的芯片的一部分上的隔膜，并通过电转换对应于该压力的位移来感测隔膜上的压力，提供具有至少尺寸等于 通过将通过将隔膜的一侧的长度除以膜片的厚度作为水平轴而获得的纵横比设定为压力传感器的允许压力电阻的特性曲线的导数，并且通过设定容许压力 作为垂直轴的压力传感器的电阻变为接近零，能够实现具有高灵敏度和高耐压性的压力传感器。

公开(公告)号：US08338899B2

公开(公告)日：2012-12-25

申请号：US12768221

申请日：2010-04-27

申请人： Tomohisa Tokuda ,  Hirofumi Tojo

发明人： Tomohisa Tokuda ,  Hirofumi Tojo

IPC分类号： H01L29/84

CPC分类号： G01L9/0042

摘要： The pressure sensor according to the present invention has a sensor chip having a first semiconductor layer that has an opening portion, and a second semiconductor layer, formed on the first semiconductor layer, having a recessed portion that forms a diaphragm and a base, having a pressure guiding hole that is connected to the opening portion, bonded to the sensor chip. The recessed portion in the second semiconductor layer is larger than the opening portion of the first semiconductor layer. The opening portion of the first semiconductor layer has an opening diameter on the second semiconductor layer side that is larger than the opening diameter on the base side.

摘要翻译： 根据本发明的压力传感器具有传感器芯片，具有具有开口部的第一半导体层和形成在第一半导体层上的第二半导体层，具有形成隔膜的凹部和基部，具有 压力引导孔，其连接到开口部分，结合到传感器芯片。 第二半导体层的凹部大于第一半导体层的开口部。 第一半导体层的开口部的第二半导体层侧的开口直径大于基底侧的开口直径。

公开(公告)号：US20110247422A1

公开(公告)日：2011-10-13

申请号：US13085837

申请日：2011-04-13

申请人： Tomohisa TOKUDA ,  Hirofumi TOJO ,  Nozomi KIDA

发明人： Tomohisa TOKUDA ,  Hirofumi TOJO ,  Nozomi KIDA

IPC分类号： G01L13/02

CPC分类号： G01L9/0054 ,  G01L9/0042 ,  G01L15/00 ,  G01L19/02

摘要： A pressure sensor including a sensor chip; a differential pressure diaphragm provided in the center portion of the sensor chip; a first differential pressure gauge formed along a radial direction relative to the center of the differential pressure diaphragm, provided on a first edge of the differential pressure diaphragm; a second differential pressure gauge formed along a circumferential direction, which is perpendicular to the radial direction, provided in the vicinity of the first differential pressure gauge on the first edge of the differential pressure diaphragm; and a static pressure diaphragm disposed between an edge portion of the sensor chip and one of the edges, other than the first edge, of the differential pressure diaphragm, provided to the outside of the differential pressure diaphragm.

摘要翻译： 一种压力传感器，包括传感器芯片; 设置在传感器芯片的中心部分的差压隔膜; 相对于压差隔膜的中心沿径向形成的第一差压计，设置在压差隔膜的第一边缘上; 在压差隔膜的第一边缘处设置在第一差压计附近的沿径向方向的圆周方向形成的第二差压表; 以及设置在传感器芯片的边缘部分和差压压力膜片的除了第一边缘的边缘之一之外的静压力隔膜，设置在差压隔膜的外侧。

公开(公告)号：US20100270629A1

公开(公告)日：2010-10-28

申请号：US12768221

申请日：2010-04-27

申请人： Tomohisa TOKUDA ,  Hirofumi Tojo

发明人： Tomohisa TOKUDA ,  Hirofumi Tojo

IPC分类号： H01L29/84 ,  H01L21/02

CPC分类号： G01L9/0042

摘要： The pressure sensor according to the present invention has a sensor chip having a first semiconductor layer that has an opening portion, and a second semiconductor layer, formed on the first semiconductor layer, having a recessed portion that forms a diaphragm and a base, having a pressure guiding hole that is connected to the opening portion, bonded to the sensor chip. The recessed portion in the second semiconductor layer is larger than the opening portion of the first semiconductor layer. The opening portion of the first semiconductor layer has an opening diameter on the second semiconductor layer side that is larger than the opening diameter on the base side.

摘要翻译： 根据本发明的压力传感器具有传感器芯片，具有具有开口部的第一半导体层和形成在第一半导体层上的第二半导体层，具有形成隔膜的凹部和基部，具有 压力引导孔，其连接到开口部分，结合到传感器芯片。 第二半导体层的凹部大于第一半导体层的开口部。 第一半导体层的开口部的第二半导体层侧的开口直径大于基底侧的开口直径。

公开(公告)号：US20100083765A1

公开(公告)日：2010-04-08

申请号：US12574075

申请日：2009-10-06

申请人： Masayuki Yoneda ,  Tomohisa Tokuda

发明人： Masayuki Yoneda ,  Tomohisa Tokuda

IPC分类号： G01L9/06

CPC分类号： G01L9/0054 ,  G01L9/065

摘要： A pressure sensor according to the present invention comprises: a differential pressure diaphragm; a static pressure diaphragm, which is provided to an outer perimeter part of the differential pressure diaphragm; a first static pressure gauge pair that is formed in the end part of the static pressure diaphragm and comprises two static pressure gauges, which are disposed such that they sandwich the differential pressure diaphragm; and a second static pressure gauge pair that is formed in the center part of the static pressure diaphragm and comprises two static pressure gauges which are disposed such that they sandwich the differential pressure diaphragm.

摘要翻译： 根据本发明的压力传感器包括：差压隔膜; 静压膜，其设置在差压隔膜的外周部; 第一静压计对，其形成在静压隔膜的端部，并包括两个静压计，它们被设置成它们夹在压差隔膜上; 以及形成在静压隔膜的中心部分的第二静压计对，并且包括两个静压计，它们被设置成使得它们夹在差压隔膜上。

公开(公告)号：US20080202248A1

公开(公告)日：2008-08-28

申请号：US12035539

申请日：2008-02-22

申请人： Hirofumi Tojo ,  Masayuki Yoneda ,  Tomohisa Tokuda

发明人： Hirofumi Tojo ,  Masayuki Yoneda ,  Tomohisa Tokuda

IPC分类号： G01L9/06

CPC分类号： G01L9/0042

摘要： In a pressure sensor comprising a diaphragm formed on a portion of a chip made of semiconductor material and that senses pressure on the diaphragm by electrically converting the displacement corresponding to that pressure, the provision of the diaphragm with an aspect ratio of at least a size such that the derivative of the characteristic curve of the allowable pressure resistance of the pressure sensor, defined by setting the aspect ratio obtained by dividing the length of one side of the diaphragm by the thickness of the diaphragm as the horizontal axis and by setting the allowable pressure resistance of the pressure sensor as the vertical axis, becomes nearly zero, enables a pressure sensor having high sensitivity and high pressure resistance.

摘要翻译： 在压力传感器中，包括形成在由半导体材料制成的芯片的一部分上的隔膜，并通过电转换对应于该压力的位移来感测隔膜上的压力，提供具有至少尺寸等于 通过将通过将隔膜的一侧的长度除以膜片的厚度作为水平轴而获得的纵横比设定为压力传感器的允许压力电阻的特性曲线的导数，并且通过设定容许压力 作为垂直轴的压力传感器的电阻变为接近零，能够实现具有高灵敏度和高耐压性的压力传感器。