发明授权
- 专利标题： Methods of forming a ferroelectric layer and methods of manufacturing a ferroelectric capacitor including the same
- 专利标题（中）： 形成铁电体层的方法和制造其的铁电电容器的制造方法
-
申请号： US12183657申请日： 2008-07-31
-
公开(公告)号： US07811834B2公开(公告)日： 2010-10-12
- 发明人: Dong-Hyun Im , Ik-Soo Kim , Choong-Man Lee , Jang-Eun Heo , Sung-Ju Lee
- 申请人： Dong-Hyun Im , Ik-Soo Kim , Choong-Man Lee , Jang-Eun Heo , Sung-Ju Lee
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Myers Bigel Sibley & Sajovec, PA
- 优先权： KR10-2007-0076678 20070731
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method of forming a ferroelectric layer is provided. A metal-organic source gas is provided into a chamber into which an oxidation gas is provided for a first time period to form ferroelectric grains on a substrate. A ferroelectric layer is formed by performing at least twice a step of providing a metal-organic source gas into the chamber during the first time period using a pulse method to grow the ferroelectric grains.
公开/授权文献
信息查询
IPC分类:
