Invention Grant
US07811891B2 Method to control the gate sidewall profile by graded material composition
有权
通过分级材料组成控制栅极侧壁轮廓的方法
- Patent Title: Method to control the gate sidewall profile by graded material composition
- Patent Title (中): 通过分级材料组成控制栅极侧壁轮廓的方法
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Application No.: US11331958Application Date: 2006-01-13
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Publication No.: US07811891B2Publication Date: 2010-10-12
- Inventor: Marius K. Orlowski , Olubunmi O. Adetutu , Phillip J. Stout
- Applicant: Marius K. Orlowski , Olubunmi O. Adetutu , Phillip J. Stout
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Hamilton & Terrile, LLP
- Agent Michael Rocco Cannatti
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A semiconductor process and apparatus uses a predetermined sequence of patterning and etching steps to etch a gate stack (30, 32) formed over a substrate (36), thereby forming an etched gate (33) having a vertical sidewall profile (35). By constructing the gate stack (30, 32) with a graded material composition of silicon-based layers, the composition of which is selected to counteract the etching tendencies of the predetermined sequence of patterning and etching steps, a more idealized vertical gate sidewall profile (35) may be obtained.
Public/Granted literature
- US20070166902A1 Method to control the gate sidewall profile by graded material composition Public/Granted day:2007-07-19
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