发明授权
US07811901B1 Method and edge region structure using co-implanted particles for layer transfer processes
有权
使用共同植入颗粒进行层转移过程的方法和边缘区域结构
- 专利标题: Method and edge region structure using co-implanted particles for layer transfer processes
- 专利标题(中): 使用共同植入颗粒进行层转移过程的方法和边缘区域结构
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申请号: US12315369申请日: 2008-12-01
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公开(公告)号: US07811901B1公开(公告)日: 2010-10-12
- 发明人: Philip James Ong , Harry Kirk , James Andrew Sullivan
- 申请人: Philip James Ong , Harry Kirk , James Andrew Sullivan
- 申请人地址: US CA San Jose
- 专利权人: Silicon Genesis Corporation
- 当前专利权人: Silicon Genesis Corporation
- 当前专利权人地址: US CA San Jose
- 代理机构: Townsend and Townsend and Crew LLP
- 主分类号: H01L21/30
- IPC分类号: H01L21/30
摘要:
A method for fabricating a silicon on substrate structure having smooth edge regions. The method includes providing a silicon donor substrate having a surface region and a backside region. A substrate thickness is provided between the surface region and the backside region. The method includes co-implanting a plurality of first particles through the surface region into a vicinity of a cleave region and a plurality of second particles through the surface region into the vicinity of the cleave region. The cleave region defines a thickness of material to be removed between the cleave region and the surface region. The surface region of the silicon donor substrate is joint to a handle substrate to form a coupled substrate structure. The coupled substrate structure is then processed using a thermal treatment process and placed into a cleaving chamber. A cleaving action is initiated at an edge region of the coupled substrate structure to begin to detach the thickness of material at the edge region toward a center region of the thickness of material. The thickness of material is freed from a remaining portion of the coupled substrate structure. In a specific embodiment, the method provides an edge region having an edge profile that is substantially free from particles that can lead to breakage and the like.